Nonlinear excitonic optical absorption in GaSb

Fox, A. M.; Maciel, A. C.; Ryan, J. F.; Kerr, T.
August 1987
Applied Physics Letters;8/10/1987, Vol. 51 Issue 6, p430
Academic Journal
We have measured the saturation of optical absorption in GaSb at wavelengths close to the band gap, and have determined the nonlinear absorption (α2) and refraction (n2) coefficients. At liquid-helium temperature a sharp free-exciton absorption line is observed which saturates with increasing incident laser intensity; we obtain values |α2|=70 cm W-1 and |n2|≊0.2 cm2 kW-1. At room temperature we do not observe a well-defined exciton; saturation of the residual interband absorption occurs at much higher intensity, and it is found to be obscured by strong thermal effects.


Related Articles

  • Nitrogen-induced optical absorption spectra of InP and GaP: direct vs. indirect band-gap systems. Ishikawa, Masato; Nakayama, Takashi // AIP Conference Proceedings;12/22/2011, Vol. 1399 Issue 1, p75 

    Nitrogen doping often induces the band-gap reduction for III-V semiconductors. To understand its chemical trend, the electronic and optical properties are studied by the first-principles calculation with comparing the cases of various III-V compounds. We found that III-V semiconductors are...

  • High efficient GaN-based laser diodes with tunnel junction. Feng, M. X.; Liu, J. P.; Zhang, S. M.; Jiang, D. S.; Li, Z. C.; Zhou, K.; Li, D. Y.; Zhang, L. Q.; Wang, F.; Wang, H.; Chen, P.; Liu, Z. S.; Zhao, D. G.; Sun, Q.; Yang, H. // Applied Physics Letters;7/22/2013, Vol. 103 Issue 4, p043508 

    High-efficient GaN-based laser diodes (LDs) with tunnel junction are designed by replacing conventional p-type AlGaN cladding layers and p-type GaN contact with lower-resistant n-type AlGaN cladding layers and n-type GaN contact. In addition, the characteristics of the LDs with tunnel junction...

  • Excitonic absorption in GaSe and InSe crystals under picosecond excitation. Kyazym-zade, A. G.; Agaeva, A. A.; Salmanov, V. M.; Mokhtari, A. G. // Inorganic Materials;Dec2007, Vol. 43 Issue 12, p1275 

    The nonlinear light absorption in GaSe and InSe layered crystals in the exciton resonance region and its time evolution have been studied experimentally under high-density optical excitation. The observed variation of the absorption coefficient with time and excitation intensity is due not only...

  • Electrostatic-discharge-induced degradation of 1.3 μm AlGaInAs/InP buried heterostructure laser diodes. Ichikawa, Hiroyuki; Matsukawa, Shinji; Hamada, Kotaro; Ikoma, Nobuyuki; Nakabayashi, Takashi // Journal of Applied Physics;Oct2009, Vol. 106 Issue 8, p083101-1 

    Degradation of 1.3 μm AlGaInAs buried heterostructure laser diodes due to electrostatic discharge (ESD) is studied. The degradation mechanism of this material has not previously been clear and so the ESD tolerance was evaluated. Degradation occurred at 0.5 and 2.5 kV for forward and reverse...

  • Interband Absorption of Light in Semiconductor Nanostructures. Pokutnyi, S. I. // Semiconductors;Jun2003, Vol. 37 Issue 6, p718 

    Interband absorption of light in a small semiconductor microcrystal was investigated theoretically within the dipole approximation. An expression for the light-absorption coefficient was derived for the situation where the polarization-related interaction of an electron and hole with the...

  • Interband absorption of light in quasi-zero-dimensional semiconductor systems. Pokutniı, S. I. // Physics of the Solid State;Jul99, Vol. 41 Issue 7, p1198 

    The interband absorption of light in a small semiconductor microcrystal is studied theoretically in the dipole approximation. An expression is obtained for the light absorption coefficient under conditions where the polarization interaction of an electron and a hole with the surface of the...

  • Saturable absorption in intracavity loss modulated quantum well lasers. O'Gorman, J.; Levi, A.F.J.; Tanbun-Ek, T.; Logan, R.A. // Applied Physics Letters;7/1/1991, Vol. 59 Issue 1, p16 

    Examines the saturable absorption in intracavity loss modulated indium gallium arsenide/indium phosphide quantum well lasers. Bistability in the static laser light output/absorber; Temperature dependence of saturable absorption in quantum well structures; Modulation of laser threshold at higher...

  • Color centers in LiCaAlF[sub 6] single crystals and their suppression by doping. Sato, Hiroki; Machida, Hiroshi; Shimamura, Kiyoshi; Bensalah, Amina; Satonaga, Tomohiko; Fukuda, Tsuguo; Mihokova, Eva; Dusek, Michal; Nikl, Martin; Vedda, Anna // Journal of Applied Physics;May2002, Vol. 91 Issue 9, p5666 

    LiCaAlF[sub 6] (LiCAF) single crystals pure and doped with MgF[sub 2] and BaF[sub 2] were successfully grown by the Czochralski technique. Optical absorption measurements in the UV/Visible spectral regions following x-ray irradiation (radiation induced absorption) were performed in order to...

  • Optical properties of Hg1-xCdxTe sawtooth superlattices. Chang, Yia-Chung; Cheung, J.; Chiou, A.; Khoshnevisan, M. // Journal of Applied Physics;7/15/1989, Vol. 66 Issue 2, p829 

    Reports on the theoretical studies of the band structures, photoabsorption, electro-optic coefficient and second order susceptibility (X²) of Hg[subt]-[subx]Cd[subx]Te sawtooth superlattices. Details on supelattices made with HgTE and CdTe; Discussion on band structures; Description of...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics