Electron trap center generation due to hole trapping in SiO2 under Fowler–Nordheim tunneling stress

Uchida, Hidetsugu; Ajioka, Tsuneo
August 1987
Applied Physics Letters;8/10/1987, Vol. 51 Issue 6, p433
Academic Journal
The relation between generation of neutral electron trap centers and hole trapping in thermally grown SiO2 under Fowler–Nordheim tunneling stress has been investigated. The experimental results show that the density of neutral electron trap centers is proportional to the density of trapped holes under Fowler–Nordheim tunneling stress with various electric fields and the total number of electrons injected into the oxide. The generation mechanism is explained by a model based on strained bonds.


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