Nearly ideal electronic properties of sulfide coated GaAs surfaces

Yablonovitch, E.; Sandroff, C. J.; Bhat, R.; Gmitter, T.
August 1987
Applied Physics Letters;8/10/1987, Vol. 51 Issue 6, p439
Academic Journal
We have discovered that a class of inorganic sulfides [Li2S, (NH4)2S, Na2S·9H2O, etc.] imparts excellent electronic properties to GaAs surfaces. The surface recombination velocity at the interface between Na2S·9H2O and GaAs begins to approach that of the nearly ideal AlGaAs/GaAs interface. We propose the formation of a robust covalently bonded sulfide layer to explain the favorable electronic quality of such interfaces.


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