TITLE

Oxide trapping under spatially variable oxide electric field in the metal-oxide-silicon structure

AUTHOR(S)
Avni, E.; Shappir, J.
PUB. DATE
August 1987
SOURCE
Applied Physics Letters;8/10/1987, Vol. 51 Issue 6, p463
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
An improved trapping-detrapping model is presented describing the effect of electron injection into the oxide of metal-oxide-silicon devices. The model covers both hot-electron and tunneling injection. It takes into account the spatial variation of the oxide electric field due to the trapped charge as well as the effect of this variation on the trapping-detrapping processes. The calculated results agree well with previously reported experimental results such as the field-dependent steady-state flatband voltage and the trapped charge centroid.
ACCESSION #
9823794

 

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