Epitaxial yttrium silicide on (111) silicon by vacuum annealing

Gurvitch, M.; Levi, A. F. J.; Tung, R. T.; Nakahara, S.
August 1987
Applied Physics Letters;8/3/1987, Vol. 51 Issue 5, p311
Academic Journal
Epitaxial YSi2-x films have been fabricated. The smooth 430-Å-thick silicide films on Si (111) substrates were characterized by a Rutherford backscattering minimum channeling yield χmin =8%, establishing YSi2-x as one of the best known epitaxial silicides. Results of electrical measurements are also presented.


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