TITLE

Ohmic contacts to n-GaAs using In/Pd metallization

AUTHOR(S)
Allen, L. H.; Hung, L. S.; Kavanagh, K. L.; Phillips, J. R.; Yu, A. J.; Mayer, J. W.
PUB. DATE
August 1987
SOURCE
Applied Physics Letters;8/3/1987, Vol. 51 Issue 5, p326
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Ohmic contacts to n-GaAs (Si doped at 2×1018 cm-3) with contact resistances of 0.7–1.5×10-6 Ω cm2 have been formed with deposited layers of In and Pd. The layers were sequentially evaporated and then annealed at 500 °C for 20 s to form In3Pd and a top layer of In. In addition a thin (≊200 Å) reacted layer was formed at the GaAs interface. Uniform interface morphology was observed with no evidence of localized reaction.
ACCESSION #
9823751

 

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