Determination of the electron diffusion length in p-GaP by intensity modulated photocurrent measurements with an electrolyte contact

Peat, R.; Peter, L. M.
August 1987
Applied Physics Letters;8/3/1987, Vol. 51 Issue 5, p328
Academic Journal
Sinusoidal intensity modulation in the frequency range 1 Hz–65 kHz has been used to study the frequency dependence of the photocurrent at the p-GaP/0.5 M H2SO4 junction. It is shown that the high-frequency response is independent of surface recombination, so that the diffusion length of electrons and the absorption coefficient of the semiconductor can be derived. In the case of p-GaP, the electron diffusion length was found to be (7.9±0.8)×10-6 cm, and the absorption coefficient at 442 nm was calculated to be (3.2±0.3)×104 cm-1.


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