Lattice relaxation of pressure-induced deep centers in GaAs:Si

Li, M. F.; Yu, P. Y.; Weber, E. R.; Hansen, W.
August 1987
Applied Physics Letters;8/3/1987, Vol. 51 Issue 5, p349
Academic Journal
Deep centers induced by hydrostatic pressure in GaAs:Si have been studied by deep level transient spectroscopy and constant temperature capacitance transient techniques. The capture behavior of these centers has been studied in detail and found to be consistent with the multiphonon emission theory. The pressure coefficients of the ionization energy and the barrier height are consistent with the large lattice relaxation model proposed by D. V. Lang and R. A. Logan [Phys. Rev. Lett. 39, 635 (1977)].


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