TITLE

Si3N4-Si interface formation by catalytic nitridation using nitrogen exposures on alkali metal overlayers and removal of the catalyst: N2/Na/Si (100) 2×1

AUTHOR(S)
Soukiassian, P.; Gentle, T. M.; Schuette, K. P.; Bakshi, M. H.; Hurych, Z.
PUB. DATE
August 1987
SOURCE
Applied Physics Letters;8/3/1987, Vol. 51 Issue 5, p346
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Core level photoemission spectroscopy using synchrotron radiation was performed to study the activity of sodium on the nitridation of the (100) face of silicon. At room temperature, the exposition to molecular nitrogen of a Si (100) surface modified by a sodium monolayer induced the formation of a SiNx compound. The sodium catalyst is removed from the surface by thermal desorption at moderate temperature. Subsequently, a clean (sodium free) Si3N4-Si interface was formed at a much lower temperature than without the alkali metal.
ACCESSION #
9823695

 

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