Carrier trapping in single quantum wells with different confinement structures

Feldmann, J.; Peter, G.; Göbel, E. O.; Leo, K.; Polland, H.-J.; Ploog, K.; Fujiwara, K.; Nakayama, T.
July 1987
Applied Physics Letters;7/27/1987, Vol. 51 Issue 4, p226
Academic Journal
The trapping efficiency and trapping dynamics of photoexcited carriers in GaAs/AlGaAs single quantum wells with different confinement structures are examined at low temperature by means of picosecond luminescence as well as photoluminescence excitation spectroscopy. The trapping efficiency is 100% only in graded-index separate confinement heterostructures with a linear band-gap profile. The lower trapping efficiency of other confinement structures is due to radiative and nonradiative recombination in the confinement layers.


Related Articles

  • Carriers induced at the end of a quantum well. Stern, Frank; Laux, Steven E. // Journal of Applied Physics;7/15/1992, Vol. 72 Issue 2, p809 

    Presents a study that calculated the charge distribution of carries induced at the end of a quantum well by an auxillary confining potential perpendicular to the plane of the well. Information on the notion of combining the tight confinement of carriers in a quantum well; Details of structures...

  • Optically detected carrier confinement to one and zero dimension in GaAs quantum well wires and boxes. Cibert, J.; Petroff, P. M.; Dolan, G. J.; Pearton, S. J.; Gossard, A. C.; English, J. H. // Applied Physics Letters;11/10/1986, Vol. 49 Issue 19, p1275 

    Carrier confinement to one and zero degrees of freedom has been achieved in artificial quantum well wires and boxes fabricated in the GaAs-GaAlAs system. Low-temperature cathodoluminescence measurements show new luminescence lines attributed to transitions arising from ground and excited levels...

  • Quantum computing takes another step closer to fruition.  // R&D Magazine;Apr2003, Vol. 45 Issue 4, p8 

    Reports that researchers at the University of Michigan in Ann Arbor have developed a method to entangle three electrons within a quantum well comprised of cadmium telluride. Description of entanglement; Importance of entanglement in quantum computers; Approaches to achieve controllable...

  • Spin Orientation and Spin Currents Induced by Linearly Polarized Light. Tarasenko, Sergey A.; Ivchenko, Eugeniyus L. // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p1331 

    To date, optical orientation of free-carrier spins and spin currents have been achieved by circularly polarized light, while the linearly polarized light has been used for optical alignment of electron momenta. Here we show that, in low-dimensional structures, absorption of the linearly...

  • Resonant modes and inter-well coupling in photonic quantum well with negative index materials. Yin, C. -P.; Dong, J. -W.; Wang, H. -Z. // European Physical Journal B -- Condensed Matter;Jan2009, Vol. 67 Issue 2, p221 

    The transfer matrix method was used to study the resonant modes in photonic quantum well by stacking different photonic crystals consisting of positive index materials and negative index materials. The eigenfrequency equation for the resonant modes is derived. It is found that these resonant...

  • Multiband coupling effects on electron quantum well intersubband transitions. Peng, L. H.; Fonstad, C. G. // Journal of Applied Physics;1/15/1995, Vol. 77 Issue 2, p747 

    Presents a study which examined the multiband coupling effects on electronic single particle excitations (SPE) of infrared and Raman processes in type I quantum wells (QW). Previous studies on SPE and QW; Details of the k-p method; Intersubband optical selection rules.

  • High-frequency properties of systems with drifting electrons and polar optical phonons. Kukhtaruk, S. M. // Semiconductor Physics, Quantum Electronics & Optoelectronics;2008, Vol. 11 Issue 1, p43 

    An analysis of interaction between drifting electrons and optical phonons in semiconductors is presented. Three physical systems are studied: three-dimensional electron gas (3DEG) in bulk material; two-dimensional electron gas (2DEG) in a quantum well, and two-dimensional electron gas in a...

  • Autocorrelation function of microcavity-emitting field in the non-linear regime. Eleuch, H.; Rachid, N. // European Physical Journal D -- Atoms, Molecules, Clusters & Opti;May2010, Vol. 57 Issue 2, p259 

    We study the photon statistics of the field emitted from a semiconductor microcavity containing a quantum well in the non-linear regime. The q-deformed boson concept (quon) allows us to derive an analytical expression of the autocorrelation function in non-resonant pumping. The dependence of the...

  • Analysis of the photoluminescence spectra of CdHgte heteroepitaxial structures with potential and quantum wells grown by molecularbeam epitaxy. Voitsekhovskii, A.; Gorn, D.; Izhnin, I.; Izhnin, A.; Goldin, V.; Mikhailov, N.; Dvoretskii, S.; Sidorov, Yu.; Yakushev, M.; Varavin, V. // Russian Physics Journal;Jan2013, Vol. 55 Issue 8, p910 

    A theoretical model for description of the band diagram and the photoluminescence spectra of heteroepitaxial structures (HES) based on CdHgTe (MCT) with potential and quantum wells (QW) grown by molecularbeam epitaxy (MBE) is developed. A special feature of the model is that the model takes into...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics