Carrier trapping in single quantum wells with different confinement structures

Feldmann, J.; Peter, G.; Göbel, E. O.; Leo, K.; Polland, H.-J.; Ploog, K.; Fujiwara, K.; Nakayama, T.
July 1987
Applied Physics Letters;7/27/1987, Vol. 51 Issue 4, p226
Academic Journal
The trapping efficiency and trapping dynamics of photoexcited carriers in GaAs/AlGaAs single quantum wells with different confinement structures are examined at low temperature by means of picosecond luminescence as well as photoluminescence excitation spectroscopy. The trapping efficiency is 100% only in graded-index separate confinement heterostructures with a linear band-gap profile. The lower trapping efficiency of other confinement structures is due to radiative and nonradiative recombination in the confinement layers.


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