TITLE

Slip dislocation propagation in In-doped liquid encapsulated Czochralski GaAs during crystal growth

AUTHOR(S)
Ono, Haruhiko; Kitano, Tomohisa; Matsui, Junji
PUB. DATE
July 1987
SOURCE
Applied Physics Letters;7/27/1987, Vol. 51 Issue 4, p238
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A propagation rule was studied for two types of slip dislocations arising during crystal growth. In order to specify the dislocation distribution revealed by x-ray topography, we considered the relationship among the slip system, thermal gradient, and stress field. One type of slip dislocation was found to propagate on slip systems having a maximum Schmid factor in a uniform radial stress field, while another well known type occurred in a tangential stress field. It was concluded that different slip systems can be activated by specific stress fields caused by different thermal gradients under various growth conditions.
ACCESSION #
9823677

 

Related Articles

  • Optical mapping of residual stress in Czochralski grown GaAs. Dobrilla, P.; Blakemore, J. S. // Applied Physics Letters;5/12/1986, Vol. 48 Issue 19, p1303 

    Despite several detailed theoretical analyses of the stress distribution expected for Czochralski grown GaAs crystals, experimental verification of these calculations has hitherto relied on dislocation density measurements. The present work shows that weak photoelastic patterns are resolvable in...

  • Ga2O3: The origin of growth-induced oval defects in GaAs molecular beam epitaxy. Weng, Shang-Lin // Applied Physics Letters;8/11/1986, Vol. 49 Issue 6, p345 

    Based on thermodynamic and other quantitative results, we show that the formation of growth-induced oval defects in GaAs molecular beam epitaxy originates from the decomposition of Ga2O3 in the Ga melt and the subsequent evaporation of the resultant suboxide Ga2O molecules. After landing on the...

  • Growth of rare-earth single crystals by molecular beam epitaxy: The epitaxial relationship between hcp rare earth and bcc niobium. Kwo, J.; Hong, M.; Nakahara, S. // Applied Physics Letters;8/11/1986, Vol. 49 Issue 6, p319 

    High-quality rare-earth (RE) single-crystal films of yttrium (Y) and gadolinium (Gd) were successfully grown with the metal molecular beam epitaxy technique on a bcc Nb single-crystal film which serves as a buffer layer to the sapphire substrates. With reflection high-energy electron...

  • Solid phase epitaxial regrowth of ion-implanted amorphized InP. Licoppe, C.; Nissim, Y. I.; Krauz, P.; Henoc, P. // Applied Physics Letters;8/11/1986, Vol. 49 Issue 6, p316 

    Solid phase epitaxial regrowth of implanted amorphous InP layers is shown to occur in the temperature range 230–330 °C. It leads to defective monocrystalline layers. The kinetics of growth follow an activation law with activation energy Ea=1.55 eV±0.2 eV. Roughening of the...

  • Ultralong minority-carrier lifetimes in GaAs grown by low-pressure organometallic vapor phase epitaxy. Molenkamp, L. W.; Kampschöer, G. L. M.; de Lange, W.; Maes, J. W. F. M.; Roksnoer, P. J. // Applied Physics Letters;5/15/1989, Vol. 54 Issue 20, p1992 

    We have measured minority-carrier lifetimes of up to 4.9 μs in GaAs layers that have been grown by low-pressure organometallic vapor phase epitaxy. These lifetimes, representing a major improvement compared with previously obtained results, are governed by radiative recombination processes....

  • Crystal growth and optical properties of Cr[sup 4+]:Li[sub 2]TiGeO[sub 5]. Sharonov, M. Yu.; Bykov, A. B.; Owen, S.; Petricevic, V.; Alfano, R. R. // Journal of Applied Physics;1/15/2003, Vol. 93 Issue 2, p1044 

    Crystal growth and optical properties of Cr[sup 4+] centers in L[sub i]2TiGeO[sub 5] single crystals were investigated. Polarized absorption spectra at low and room temperature indicate a lowering of symmetry of the local environment of the Cr[sup 4+] ion from T[sub d] to C[sub 2] group of...

  • Blue second-harmonic generation in waveguides fabricated in undoped and scandium-doped KTiOPO4. Jongerius, M. J.; Bolt, R. J.; Sweep, N. A. // Journal of Applied Physics;4/1/1994, Vol. 75 Issue 7, p3316 

    Presents a study that determined the efficiency of second-harmonic generation at 425 nm in periodically segmented waveguides in undoped and 120 ppm scandium³+;-doped c-axis-oriented KTiOPO[sub4] (KTP) plates. Representative measurements of ionic conductivity; Nonlinear characteristics of...

  • Processes in Open Systems on Crystal Surfaces with Low Miller Indices. Voıtenko, V. A. // Technical Physics;Feb2001, Vol. 46 Issue 2, p234 

    Exposure characteristics that were obtained when growing various films on natural low Miller index surfaces of several crystals were collected and analyzed. An evolution theory that explains their special form was constructed. The type of dose characteristics obtained suggests that the surface...

  • Parameterization and impact of ice initiation processes relevant to numerical model simulations... DeMott, Paul J.; Meyers, Michael P. // Journal of the Atmospheric Sciences;1/1/94, Vol. 51 Issue 1, p77 

    Presents a method for describing ice initiation processes that are relevant to cirrus clouds for use in regional-scale numerical cloud models with bulk microphysical schemes. Parameterizations of ice initiation by homogeneous freezing of cloud and haze particles in the atmosphere; Impact of...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics