Slip dislocation propagation in In-doped liquid encapsulated Czochralski GaAs during crystal growth

Ono, Haruhiko; Kitano, Tomohisa; Matsui, Junji
July 1987
Applied Physics Letters;7/27/1987, Vol. 51 Issue 4, p238
Academic Journal
A propagation rule was studied for two types of slip dislocations arising during crystal growth. In order to specify the dislocation distribution revealed by x-ray topography, we considered the relationship among the slip system, thermal gradient, and stress field. One type of slip dislocation was found to propagate on slip systems having a maximum Schmid factor in a uniform radial stress field, while another well known type occurred in a tangential stress field. It was concluded that different slip systems can be activated by specific stress fields caused by different thermal gradients under various growth conditions.


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