Phosphorus doping for hydrogenated amorphous silicon films by a low-energy ion doping technique

Yoshida, A.; Setsune, K.; Hirao, T.
July 1987
Applied Physics Letters;7/27/1987, Vol. 51 Issue 4, p253
Academic Journal
A heated film of hydrogenated amorphous silicon was doped with phosphorus and hydrogen by a 6.0-kV diffused and accelerated beam of ions from rf discharge in a magnetic field, which produced a plasma from phosphine gas containing hydrogen. This doping technique achieved a dark conductivity of 8.7×10-4 (Ω cm-1) at room temperature. The conductivity activation energy was 0.17 eV.


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