Electron beam recrystallization of plasma-sprayed silicon substrates

Suryanarayanan, R.; Akani, M.; Gauthier, R.; M’Ghaieth, R.; Pinard, P.
July 1987
Applied Physics Letters;7/27/1987, Vol. 51 Issue 4, p259
Academic Journal
Polycrystalline silicon substrates of 5–8 cm2 area and 0.5–3 mm thickness have been recrystallized by electron beam glazing. The grain size as well as the Hall mobility increases dramatically from 50 μm to 1 mm or more and from 5 to 320 cm2/V s, respectively.


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