Quantum shift of the optical absorption edge in ultrathin amorphous hydrogenated germanium

Yang, L.; Abeles, B.
July 1987
Applied Physics Letters;7/27/1987, Vol. 51 Issue 4, p264
Academic Journal
The optical absorption coefficient in ultrathin (∼10 Å) hydrogenated amorphous germanium (a-Ge:H) layers deposited on hydrogenated amorphous silicon layers was determined by in situ reflectivity measurements. The decrease in the absorption coefficient in the ultrathin a-Ge:H layers, compared to that of thick films, is explained by an upward shift in the conduction band edge due to quantum confinement of electrons with effective mass of 0.4m0.


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