Novel high quantum efficiency Si-TaSi2 eutectic photodiodes

Ditchek, B. M.; Yacobi, B. G.; Levinson, M.
July 1987
Applied Physics Letters;7/27/1987, Vol. 51 Issue 4, p267
Academic Journal
A high quantum efficiency photodiode has been fabricated using the in situ junctions in a Si-TaSi2 eutectic composite. Due to the three-dimensional distribution of junctions in this photodiode, it yields a nearly constant quantum efficiency of about 50% between 450 and 1000 nm. In addition, the average lateral distance between junctions of only 8 μm gives this novel photodiode an inherently good spatial resolution for photodiode array applications.


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