Continuous room-temperature operation of an InGaAs-GaAs-AlGaAs strained-layer laser

Yang, Y. J.; Hsieh, K. Y.; Kolbas, R. M.
July 1987
Applied Physics Letters;7/27/1987, Vol. 51 Issue 4, p215
Academic Journal
We report the first continuous wave room-temperature InGaAs-GaAs-AlGaAs strained-layer semiconductor laser diode grown by molecular beam epitaxy. The laser is a multiple quantum well transverse junction stripe laser with a lateral heterojunction fabricated by zinc diffusion enhanced compositional disordering. The low-threshold (20 mA) and single-mode performance of the laser demonstrates that a high-quality lateral p+-p-n junction and lateral heterobarrier can be formed by zinc diffusion compositional disordering of a strained-layer InGaAs-GaAs-AlGaAs quantum well heterostructure.


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