TITLE

Molecular beam epitaxial growth and luminescence of InxGa1-xAs/InxAl1-xAs multiquantum wells on GaAs

AUTHOR(S)
Chang, Kevin H.; Berger, Paul R.; Singh, Jasprit; Bhattacharya, Pallab K.
PUB. DATE
July 1987
SOURCE
Applied Physics Letters;7/27/1987, Vol. 51 Issue 4, p261
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
This letter reports the successful molecular beam epitaxial growth of high-quality InxGa1-xAs/InxAl1-xAs directly on GaAs. In situ observation of dynamic high-energy electron diffraction oscillations during growth of InxGa1-xAs on GaAs indicates that the average cation migration rates are reduced due to the surface strain. By raising the growth temperature to enhance the migration rate and by using misoriented epitaxy to limit the propagation of threading and screw dislocations, we have grown device-quality In0.15Ga0.85As/In0.15Al0.85As multiquantum wells on GaAs with a 0.5–1.0 μm In0.15Ga0.85As buffer layer. The luminescence efficiency of the bound exciton peak increases with misorientation and its linewidth varies from 11 to 15 meV.
ACCESSION #
9823618

 

Related Articles

  • Nd[sup 3+] incorporation in CaF[sub 2] layers grown by molecular beam epitaxy. Bausa, L.E.; Legros, R.; Munoz-Yague, A. // Applied Physics Letters;7/8/1991, Vol. 59 Issue 2, p152 

    Examines the growth of monocrystalline layers of Nd[sup 3+]-doped CaF[sub 2] on (100)CaF[sub 2] substrates by molecular beam epitaxy. Concentration of Nd in CaF[sub 2] films; Evaporation of CaF[sub 2] using a standard effusion cell equipped with a boron nitride crucible; Generation of the...

  • Ethyliodide n-type doping of Hg[sub 1-x]Cd[sub x]Te (x=0.24) grown by metalorganic molecular.... Benz II, R.G.; Conte-Matos, A. // Applied Physics Letters;11/28/1994, Vol. 65 Issue 22, p2836 

    Examines the growth of conductive n-type Hg[sub 1-x]cs[sub x]Te epitaxial layers by molecular beam epitaxy using iodine doping. Selection of ethyliodide as the dopant precursor; Increase in the low temperature electron concentration; Indication of electrical activity in the high electron...

  • Growth of A[sup 3]N whiskers and plate-shaped crystals by molecular-beam epitaxy with the participation of the liquid phase. Mamutin, V. V. // Technical Physics Letters;Sep99, Vol. 25 Issue 9, p741 

    It is shown that InN and GaN whiskers and plate-shaped crystals can be grown by molecularbeam epitaxy (MBE), and the growth mechanism on gallium arsenide and sapphire substrates is investigated. A comparison is made with the theory. It is proved that the growth mechanism corresponds to the...

  • Adsorption-controlled growth of La-doped BaSnO3 by molecular-beam epitaxy. Hanjong Paik; Zhen Chen; Lochocki, Edward; H., Ariel Seidner; Verma, Amit; Tanen, Nicholas; Jisung Park; Masaki Uchida; ShunLi Shang; Bi-Cheng Zhou; Brützam, Mario; Uecker, Reinhard; Zi-Kui Liu; Jena, Debdeep; Shen, Kyle M.; Muller, David A.; Schlom, Darrell G. // APL Materials;2017, Vol. 5 Issue 11, p1 

    Epitaxial La-doped BaSnO3 films were grown in an adsorption-controlled regime by molecular-beam epitaxy, where the excess volatile SnOx desorbs from the film surface. A film grown on a (001) DyScO3 substrate exhibited a mobility of 183 cm² V-1 s-1 at room temperature and 400 cm² V-1 s-1 at...

  • Gas source iodine n-type doping of molecular beam epitaxially grown CdTe. Rajavel, D.; Summers, C.J. // Applied Physics Letters;5/4/1992, Vol. 60 Issue 18, p2231 

    Examines the growth of highly conductive n-type cadmium telluride films through molecular beam epitaxy by iodine doping using ethyliodide. Increase of room-temperature electron concentration for dopant flow rate; Determination of the structural and optical properties by x-ray double crystal...

  • Observation of reflection high energy electron diffraction intensity oscillations during Si.... Mokler, S.M.; Liu, W.K. // Applied Physics Letters;5/4/1992, Vol. 60 Issue 18, p2255 

    Examines the growth of silicon(001) during gas source molecular beam epitaxy from disilane using reflection electron diffraction intensity oscillations. Factor affecting the performance of oscillations; Observation of strong and damped oscillations under two dimensional growth regime;...

  • Gas-source molecular beam epitaxy growth of Ga[sub x]In[sub 1-x]As[sub y]P[sub 1-y] lattice.... Zhang, G. // Applied Physics Letters;8/23/1993, Vol. 63 Issue 8, p1128 

    Examines the gas-source molecular beam epitaxy growth of Ga[sub x]In[sub 1-x]As[sub y]P[sub 1-y] layers lattice matched to gallium arsenide. Use of x-ray diffraction, photoluminescence and Hall measurements; Preparation of high-quality heterojunctions and quantum well structures; Presence of...

  • Epitaxial growth and surface structure of (0001) Be on (111) Si. Ruffner, Judith A.; Slaughter, J.M.; Eickmann, James; Falco, Charles M. // Applied Physics Letters;1/3/1994, Vol. 64 Issue 1, p31 

    Examines the growth of epitaxial single-crystal (0001) beryllium (Be) on (111) silicon substrates using molecular beam epitaxy. Improvement of crystalline quality with increasing deposition temperature; Surface structure of Be; Deposition of Be from a Knudsen cell.

  • Selective growth of Ge on Si(100) through vias of SiO[sub 2] nanotemplate using solid source molecular beam epitaxy. Qiming Li; Han, Sang M.; Brueck, Steven R.J.; Hersee, Stephen; Ying-Bing Jiang; Huifang Xu // Applied Physics Letters;12/15/2003, Vol. 83 Issue 24, p5032 

    We demonstrate that Ge can be selectively grown on Si(100) through openings in a SiO[sub 2] nanotemplate by solid source molecular beam epitaxy. The selectivity relies on the thermal instability of GeO and SiO near 650 °C. Ge islands grow in the template windows and coalesce on top of the...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics