TITLE

New resonant tunneling superlattice avalanche photodiode device structure for long-wavelength infrared detection

AUTHOR(S)
Summers, C. J.; Brennan, K. F.
PUB. DATE
July 1987
SOURCE
Applied Physics Letters;7/27/1987, Vol. 51 Issue 4, p276
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A new device structure useful in detecting long-wavelength radiation which uses a variably spaced superlattice both to inject photogenerated electrons into a wider band-gap semiconductor and to promote efficient impact ionization and gain at low bias voltages is proposed. Both of these properties result directly from the unique property of the superlattice structure to create a near monoenergetic stream of electrons and inject them at high energy into an adjacent semiconducting layer. Thus for the first time it should be possible to obtain long-wavelength sensors with high gain (∼103), ultralow noise, and high detectivity.
ACCESSION #
9823616

 

Related Articles

  • Trap-assisted tunneling in AlGaN avalanche photodiodes. Shao, Z. G.; Gu, Q. J.; Yang, X. F.; Zhang, J.; Kuang, Y. W.; Zhang, D. B.; Yu, H. L.; Hong, X. K.; Feng, J. F.; Liu, Y. S. // AIP Advances;2017, Vol. 7 Issue 6, p1 

    We fabricated AlGaN solar-blind avalanche photodiodes (APDs) that were based on separate absorption and multiplication (SAM) structures. It was determined experimentally that the dark current in these APDs is rapidly enhanced when the applied voltage exceeds 52 V. Theoretical analyses...

  • Two-dimensional simulation of large-area InGaAs/InP p-i-n photodiodes. Malyshev, S.; Chizh, A.; Vasileuski, Yu. // Semiconductors;Sep2006, Vol. 40 Issue 9, p1116 

    A stationary physical model of the p-i-n photodiode based on a two-dimensional drift-diffusion scheme of charge transport in multilayer InxGa1- x AsyP1- y /InP heterostructures is developed. The model takes into account the Fermi statistics for electrons and holes, charge carrier mobility...

  • Generation-Recombination Effect in High-Temperature HgCdTe Heterostructure Nonequilibrium Photodiodes. Jóźwikowski, K.; Piotrowski, J.; Gawron, W.; Rogalski, A.; Piotrowski, A.; Pawluczyk, J.; Jóźwikowska, A.; Rutkowski, J.; Kopytko, M. // Journal of Electronic Materials;Aug2009, Vol. 38 Issue 8, p1666 

    The dark current of near-room-temperature long-wavelength heterojunction photodiodes was studied. The dark current of the devices is much greater than that calculated from the Auger generation mechanisms. A model of trap- assisted tunneling via traps located at dislocation cores is proposed as...

  • Ammonium sulfide passivation of Type-II InAs/GaSb superlattice photodiodes. Gin, A.; Wei, Y.; Hood, A.; Bajowala, A.; Yazdanpanah, V.; Razeghi, M.; Tidrow, M. // Applied Physics Letters;3/22/2004, Vol. 84 Issue 12, p2037 

    We report on the surface passivation of Type-II InAs/GaSb superlattice photodetectors using various ammonium sulfide solutions. Compared to unpassivated detectors, zero-bias resistance of treated 400 μm×400 μm devices with 8 μm cutoff wavelength was improved by over an order of...

  • Dark current filtering in unipolar barrier infrared detectors. Savich, G. R.; Pedrazzani, J. R.; Sidor, D. E.; Maimon, S.; Wicks, G. W. // Applied Physics Letters;9/19/2011, Vol. 99 Issue 12, p121112 

    Control of dark current mechanisms is essential to improving the performance of infrared photodetectors and many other electronic devices. Unipolar barriers can readily be applied to practically and efficiently filter out multiple dark current components exhibited by infrared photodetectors. Via...

  • Modeling of room temperature current-voltage measurements on homo-junction HgCdTe diodes exhibiting nonequilibrium effects. Srivastav, Vanya; Pal, R.; Venkataraman, V. // Journal of Applied Physics;Feb2012, Vol. 111 Issue 3, p033112 

    HgCdTe mid wave infrared (MWIR) n+/ν/p+ homo-junction photodiodes with planar architecture are designed, fabricated, and measured at room temperature. An improved analytical I-V model is reported by incorporating trap assisted tunneling and electric field enhanced Shockley-Read-Hall...

  • Low dark current inverted organic photodiodes using anionic polyelectrolyte as a cathode interlayer. Seongwon Yoon; Jangwhan Cho; Kyu Min Sim; Jaeun Ha; Dae Sung Chung // Applied Physics Letters;2/20/2017, Vol. 110 Issue 8, p1 

    We demonstrate the effect of anionic polyelectrolyte as a cathode interlayer to enhance charge selectivity of the electrode/semiconductor junction of organic photodiodes. Poly(styrenesulfonate) (PSS) was used as a cathode interlayer to tune the energy level of an ITO/ZnO electrode, so that hole...

  • Integrated MQW intermixed InGaAsP/InP waveguide photodiodes. Bhowmick, Tathagata; Das, Utpal // Optical & Quantum Electronics;Jan2010, Vol. 42 Issue 2, p109 

    multi-wavelength Quantum well (QW) waveguide photodiode (PD) have been designed for Coarse Wavelength Division Multiplexing (CWDM) systems in which spatial tailoring of the bandgap with post growth F implanted QW intermixing of InGaAsP/InP multi QWs for the integration have been considered. Two...

  • A Study of Deep Levels in CdHgTe by Analyzing the Tunneling Current of Photodiodes. Turinov, V. I. // Semiconductors;Sep2004, Vol. 38 Issue 9, p1092 

    The energy positions of the levels Et – Ev in the band gap and their concentration Nt were determined from studies of tunneling current Jt via these levels in photodiodes based on CdxHg1 – xTe. The shallow acceptor levels Et – Ev = 8–12 eV introduced by singly charged...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics