New resonant tunneling superlattice avalanche photodiode device structure for long-wavelength infrared detection

Summers, C. J.; Brennan, K. F.
July 1987
Applied Physics Letters;7/27/1987, Vol. 51 Issue 4, p276
Academic Journal
A new device structure useful in detecting long-wavelength radiation which uses a variably spaced superlattice both to inject photogenerated electrons into a wider band-gap semiconductor and to promote efficient impact ionization and gain at low bias voltages is proposed. Both of these properties result directly from the unique property of the superlattice structure to create a near monoenergetic stream of electrons and inject them at high energy into an adjacent semiconducting layer. Thus for the first time it should be possible to obtain long-wavelength sensors with high gain (∼103), ultralow noise, and high detectivity.


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