Femtosecond dynamics of highly excited carriers in AlxGa1-xAs

Lin, W. Z.; Fujimoto, J. G.; Ippen, E. P.; Logan, R. A.
July 1987
Applied Physics Letters;7/20/1987, Vol. 51 Issue 3, p161
Academic Journal
Femtosecond transient absorption saturation measurements are used to investigate the scattering of optically excited carriers in AlGaAs. With pulses as short as 35 fs at 1.98 eV, scattering times ranging from 13 to 330 fs are observed in samples of AlxGa1-xAs with x=0, 0.1, 0.2, 0.3, and 0.4. A dramatic decrease in the rate of carrier scattering out of the initial optically excited states is observed with increasing Al concentration.


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