Atomic arsenic detection by ArF laser-induced fluorescence

Selwyn, Gary S.
July 1987
Applied Physics Letters;7/20/1987, Vol. 51 Issue 3, p167
Academic Journal
Arsenic atoms sputtered from gallium arsenide wafers or arsenic-doped n-type silicon wafers have been detected in argon plasmas using the laser-induced fluorescence technique (LIF). Two methods of LIF detection were employed. One used a tunable, frequency-doubled dye laser to pump a metastable transition of atomic arsenic at 228.81 nm. The second technique used the broadband output of an ArF excimer laser to pump a ground-state transition of As at 193.76 nm.


Related Articles

  • Degradation of Gallium Arsenide under Irradiation with an Excimer Laser. Gradoboev, V.; Fedorov, A. I. // Technical Physics;Oct2000, Vol. 45 Issue 10, p1271 

    The results of a study of degradation of the surface of gallium arsenide resulting from irradiation with a power excimer laser at power densities ranging from the threshold power to the power level causing local melting of the surface are presented. Two degradation mechanisms have been...

  • Formation of (100)GaAs on (100) silicon by laser recrystallization. Christou, A.; Efthimiopoulos, T.; Kiriakidis, G.; Varmazis, C. // Applied Physics Letters;6/2/1986, Vol. 48 Issue 22, p1516 

    Epitaxial growth of (100) GaAs on (100) silicon was achieved by excimer laser annealing of amorphous GaAs layers at 248 nm. An AlAs encapsulation layer was found to be necessary to prevent the loss of arsenic during laser annealing. An energy density of 105 mJ/cm2 was the critical energy density...

  • Characterization of GaAs surfaces treated with phosphine gas photodecomposed by an ArF excimer laser. Sugino, Takashi; Ninomiya, Hideaki; Shirafuji, Junji; Matsuda, Koichiro // Applied Physics Letters;3/23/1998, Vol. 72 Issue 12 

    Phosphidization of GaAs surfaces is attempted with phosphine gas photodecomposed by an ArF excimer laser. Electron traps at and near the phosphidized GaAs surfaces are characterized by isothermal capacitance transient spectroscopy measurements. Phosphidization leads to a reduction in the trap...

  • Selective metallization of n-type GaAs formed by projection-patterned excimer laser doping of Si. Sugioka, K.; Toyoda, K.; Gomi, Y.; Tanaka, S. // Applied Physics Letters;8/14/1989, Vol. 55 Issue 7, p619 

    Resistless microfabrication of the metallization of n-type GaAs formed by projection-patterned doping using a KrF excimer laser is described. Silane (SiH4 ) gas is used as a source material of the n-type dopant of Si. Copper thin films with a linewidth as narrow as 3.4 μm are deposited...

  • Laser-projection-patterned etching of GaAs in a chlorine atmosphere. Foulon, F.; Green, Mino; Goodall, F. N.; De Unamuno, S. // Journal of Applied Physics;3/15/1992, Vol. 71 Issue 6, p2898 

    Deals with a study which investigated a laser-projection-patterned etching of gallium arsenide in a chlorine atmosphere which was performed with a pulsed KrF excimer laser and deep ultraviolet projection optics. Cause of the etching process carried out in a vacuum system; Influence of the...

  • Generation of carrier concentrations as high as 5x10[sup 19] cm[sup -3] in GaAs by Si doping.... Sugioka, K.; Toyoda, K. // Applied Physics Letters;12/7/1992, Vol. 61 Issue 23, p2817 

    Studies the generation of carrier concentrations in gallium arsenide through krypton fluoride excimer laser doping with silicon. Usage of the silicon hydride gas in the experiment; Connection of nonthermal equilibrium state with the cooling process and transient melting of the excimer laser...

  • Excimer laser projection etching of GaAs. Brewer, Peter D.; McClure, David; Osgood, R. M. // Applied Physics Letters;9/29/1986, Vol. 49 Issue 13, p803 

    We report the projection dry etching of GaAs using an excimer laser and HBr etching gas. Present experiments use photochemically generated reactants, which are spatially confined by gas phase collisions. Pattern transfer is accomplished by 1:1 imaging of the excimer laser light directly onto a...

  • Excimer-laser annealed ohmic contacts to n-GaAs substrates through an ultrathin reacted layer. Imanaga, Syunji; Kawai, Hiroji; Kajiwara, Kazuo; Kaneko, Kunio; Watanabe, Naozo // Journal of Applied Physics;9/15/1987, Vol. 62 Issue 6, p2381 

    Presents a study which employed an excimer laser to form ohmic contacts to n-gallium arsenide substrates through an ultrathin reacted layer. Experimental procedure; Effect of the gold overlayer; Lowest specific contact resistance measured by the transmission line method for AuGe and AuGe/Ni...

  • Excimer laser annealing of Er-implanted GaN. Rhee, Seuk Joo; Kim, Sangsig; Sterner, Christopher W.; White, Jeffrey O.; Bishop, Stephen G. // Journal of Applied Physics;9/15/2001, Vol. 90 Issue 6 

    Thin films of Er-implanted GaN are annealed with pulses of 31 ns duration from a KrF excimer laser. The degree of annealing is evaluated by measuring the Er photoluminescence at 1540 nm. The implantation dose is 4×10[sup 13]–4×10[sup 15] cm[sup -2]. The laser fluence is...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics