Modulation-doped multiquantum wells in InP/In0.53Ga0.47As grown by atmospheric pressure metalorganic chemical vapor deposition

Taylor, L. L.; Kane, M. J.; Bass, S. J.
July 1987
Applied Physics Letters;7/20/1987, Vol. 51 Issue 3, p180
Academic Journal
Here we present the first report of electrical transport measurements (Hall effect and Shubnikov de Haas) on modulation-doped InP/In0.53Ga0.47As multiquantum wells grown by atmospheric pressure metalorganic chemical vapor deposition. Measurements were made on samples containing from 4 to 50 doped quantum wells. The carrier density per well was observed to be constant, approximately 1×1012 cm-2 independent of the number of wells, with 4 K mobilities from 70 000 to 90 000 cm2 V-1 s-1. Very little persistent photoconductivity was observed in any of the multiple quantum well structures.


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