TITLE

Be incorporation in heavily doped molecular beam epitaxy grown GaAs: Evidence of nonradiative behavior by cathodoluminescence and electron acoustic measurements

AUTHOR(S)
Bresse, J. F.; Papadopoulo, A. C.
PUB. DATE
July 1987
SOURCE
Applied Physics Letters;7/20/1987, Vol. 51 Issue 3, p183
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Cathodoluminescence and electroacoustic detection have been used for the characterization of Be-doped GaAs epilayers grown by molecular beam epitaxy for the doping levels greater than 6.5×1017 at. cm-3. The Be concentration dependence of cathodoluminescence intensity as well as electron acoustic intensity shows the presence of nonradiative centers for concentrations greater than 1018 at. cm-3. Besides, extended defects and doping striations are revealed by electron acoustic images for heavily Be-doped GaAs (1020 at. cm-3).
ACCESSION #
9823594

 

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