TITLE

Raman study of an epitaxial GaAs layer on a Si [100] substrate

AUTHOR(S)
Huang, Yihe; Yu, Peter Y.; Charasse, Marie-Noelle; Lo, Yuhua; Wang, Shyh
PUB. DATE
July 1987
SOURCE
Applied Physics Letters;7/20/1987, Vol. 51 Issue 3, p192
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A bevel has been etched in a GaAs epitaxial film grown on a Si substrate, so that the Raman spectrum of the GaAs layers can be measured as a function of distance from the GaAs/Si interface. The amount of strain and disorder in the GaAs film has been estimated from the GaAs longitudinal optical phonon line shape and frequency. Both the strain and the amount of disorder were found to decrease with increase in the distance from the interface.
ACCESSION #
9823589

 

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