Damage annealing behavior of 3 MeV Si+-implanted silicon

Rai, A. K.; Baker, J.; Ingram, D. C.
July 1987
Applied Physics Letters;7/20/1987, Vol. 51 Issue 3, p172
Academic Journal
Cross-sectional transmission electron microscopy has been used to study the recrystallization behavior of a buried amorphous layer in 3 MeV Si+-implanted (100) silicon at a dose of 5×1015 cm-2. The lower (deeper) amorphous/crystalline (a/c) interface is found to be more abrupt compared to the upper (closer to the surface) a/c interface. During recrystallization similar rates of advancement of the two a/c interfaces are observed. V-shaped dislocations are observed in the completely recrystallized layer. The defect density in the upper recrystallized region is found to be higher than that in the lower recrystallized region. These observations are correlated with the shape of the damage profile. The secondary defects grown at higher temperatures (>750 °C) are found to be very stable and difficult to anneal out. The overall recrystallization behavior of the buried amorphous layer is found to be similar to that of lower energy implants.


Related Articles

  • Observation on laser-annealed silicon-on-insulator structures by cross-sectional transmission electron microscopy. Ogura, Atsushi; Terao, Hiroshi // Journal of Applied Physics;11/15/1987, Vol. 62 Issue 10, p4170 

    Presents a study which observed laser-annealed silicon-on-insulator (SOI) structures by cross-sectional transmission electron microscopy (XTEM). Mechanism of defect generation during laser recrystallization; Description of the images of specimen observed through XTEM; Electrical characteristics...

  • Amorphization/recrystallization of buried amorphous silicon layer induced by oxygen ion implantation. De Souza, J. P.; Cima, C. A.; Fichtner, P. F. P.; Boudinov, H. // Journal of Applied Physics;2/1/2004, Vol. 95 Issue 3, p877 

    In this paper we discuss the structural modifications observed in a buried amorphous Si (a-Si) layer containing high oxygen concentration level (up to ∼3 at. %) after being implanted at elevated temperature with [sup 16]O[sup +] ions. For implants conducted at temperatures lower than 150...

  • Spatial distribution of cavities in silicon formed by ion implantation generated excess vacancies. Peeva, A.; Kögier, R.; Skorupa, W.; Christensen, J. S.; Kuznetsov, A. Yu. // Journal of Applied Physics;5/1/2004, Vol. 95 Issue 9, p4738 

    The spatial distribution of nanosized cavities in silicon formed by high energy Ge ion implantation and annealing is determined. The cavities are directly observed by transmission electron microscopy without any metal decoration. They are shown to be the agglomerates of implantation-induced...

  • Impact of fluence-rate related effects on the sputtering of silicon at elevated target temperatures. Lugstein, A.; Steiger-Thirsfeld, A.; Basnar, B.; Hyun, Y. J.; Pongratz, P.; Bertagnolli, E. // Journal of Applied Physics;Feb2009, Vol. 105 Issue 4, pN.PAG 

    In this work we show how ion-beam-induced epitaxial recrystallization plays a role in focused ion-beam (FIB) sputtering of silicon at elevated temperatures. The sputtering process is the key to all high-precision machining of microstructures and nanostructures by FIBs. A fluence-rate effect...

  • Modeling two-dimensional solid-phase epitaxial regrowth using level set methods. Morarka, S.; Rudawski, N. G.; Law, M. E.; Jones, K. S.; Elliman, R. G. // Journal of Applied Physics;Mar2009, Vol. 105 Issue 5, pN.PAG 

    Modeling the two-dimensional (2D) solid-phase epitaxial regrowth (SPER) of amorphized Si (variously referred to as solid-phase epitaxial growth, solid-phase epitaxy, solid-phase epitaxial crystallization, and solid-phase epitaxial recrystallization) has become important in light of recent...

  • Instability of nanocavities in amorphous silicon. Xianfang Zhu; Williams, J. S.; Llewellyn, D.J.; McCallum, J.C. // Applied Physics Letters;4/19/1999, Vol. 74 Issue 16, p2313 

    Examines the instability of nanocavities in amorphous silicon. Introduction of a band of nanocavities; Amorphization of the crystalline Si (c-Si); Transition electron microscopy and other methodologies used to provide details of the cavity instability process.

  • A transmission electron microscopy quantitative study of the growth kinetics of H platelets in Si. Grisolia, J.; Ben Assayag, G.; Claverie, A.; Aspar, B.; Lagahe, C.; Laanab, L. // Applied Physics Letters;2/14/2000, Vol. 76 Issue 7 

    Proton implantation and thermal annealing of silicon result in the formation of a specific type of extended defects involving hydrogen, named "platelets" or "cavities." These defects have been related to the exfoliation mechanism on which a newly developed process to transfer thin films of...

  • High resolution transmission electron microscopy study of Se+-implanted and annealed GaAs: Mechanisms of amorphization and recrystallization. Sadana, D. K.; Sands, T.; Washburn, J. // Applied Physics Letters;1984, Vol. 44 Issue 6, p623 

    High resolution transmission electron microscopy (HRTEM) has been applied to the study of amorphization and recrystallization mechanisms in Se+-implanted (100) GaAs. Selenium dose of 1×1014 cm-2 at 450 keV (projected range 1550 Å) produced an amorphous band in the depth range 250-2150...

  • Pulsed-jet etch chamber for preparing silicon samples for transmission electron microscopy. Rivaud, L.; Hawkins, G. // Review of Scientific Instruments;Apr1985, Vol. 56 Issue 4, p563 

    An apparatus is described for wet chemical etching of silicon specimens for transmission electron microscopy. This etch chamber thins the central portion of a 3-mm disk to a specified thickness (1–50 μm) in a controlled and reproducible manner. The use of a pulsed jet in a sample...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics