TITLE

Damage annealing behavior of 3 MeV Si+-implanted silicon

AUTHOR(S)
Rai, A. K.; Baker, J.; Ingram, D. C.
PUB. DATE
July 1987
SOURCE
Applied Physics Letters;7/20/1987, Vol. 51 Issue 3, p172
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Cross-sectional transmission electron microscopy has been used to study the recrystallization behavior of a buried amorphous layer in 3 MeV Si+-implanted (100) silicon at a dose of 5×1015 cm-2. The lower (deeper) amorphous/crystalline (a/c) interface is found to be more abrupt compared to the upper (closer to the surface) a/c interface. During recrystallization similar rates of advancement of the two a/c interfaces are observed. V-shaped dislocations are observed in the completely recrystallized layer. The defect density in the upper recrystallized region is found to be higher than that in the lower recrystallized region. These observations are correlated with the shape of the damage profile. The secondary defects grown at higher temperatures (>750 °C) are found to be very stable and difficult to anneal out. The overall recrystallization behavior of the buried amorphous layer is found to be similar to that of lower energy implants.
ACCESSION #
9823564

 

Related Articles

  • Observation on laser-annealed silicon-on-insulator structures by cross-sectional transmission electron microscopy. Ogura, Atsushi; Terao, Hiroshi // Journal of Applied Physics;11/15/1987, Vol. 62 Issue 10, p4170 

    Presents a study which observed laser-annealed silicon-on-insulator (SOI) structures by cross-sectional transmission electron microscopy (XTEM). Mechanism of defect generation during laser recrystallization; Description of the images of specimen observed through XTEM; Electrical characteristics...

  • Amorphization/recrystallization of buried amorphous silicon layer induced by oxygen ion implantation. De Souza, J. P.; Cima, C. A.; Fichtner, P. F. P.; Boudinov, H. // Journal of Applied Physics;2/1/2004, Vol. 95 Issue 3, p877 

    In this paper we discuss the structural modifications observed in a buried amorphous Si (a-Si) layer containing high oxygen concentration level (up to ∼3 at. %) after being implanted at elevated temperature with [sup 16]O[sup +] ions. For implants conducted at temperatures lower than 150...

  • Impact of fluence-rate related effects on the sputtering of silicon at elevated target temperatures. Lugstein, A.; Steiger-Thirsfeld, A.; Basnar, B.; Hyun, Y. J.; Pongratz, P.; Bertagnolli, E. // Journal of Applied Physics;Feb2009, Vol. 105 Issue 4, pN.PAG 

    In this work we show how ion-beam-induced epitaxial recrystallization plays a role in focused ion-beam (FIB) sputtering of silicon at elevated temperatures. The sputtering process is the key to all high-precision machining of microstructures and nanostructures by FIBs. A fluence-rate effect...

  • Modeling two-dimensional solid-phase epitaxial regrowth using level set methods. Morarka, S.; Rudawski, N. G.; Law, M. E.; Jones, K. S.; Elliman, R. G. // Journal of Applied Physics;Mar2009, Vol. 105 Issue 5, pN.PAG 

    Modeling the two-dimensional (2D) solid-phase epitaxial regrowth (SPER) of amorphized Si (variously referred to as solid-phase epitaxial growth, solid-phase epitaxy, solid-phase epitaxial crystallization, and solid-phase epitaxial recrystallization) has become important in light of recent...

  • Effect of Sn on HighPermeability Grain-Oriented Silicon Steel. Fan, Li-feng; Dong, Rui-feng; Qiu, Sheng-tao; Xiang, Li; Tang, Guang-bo // Journal of Superconductivity & Novel Magnetism;Sep2014, Vol. 27 Issue 9, p1959 

    The effect of Sn on highpermeability grain-oriented silicon steel was studied by PHI-700 Auger electron spectroscopy (AES), JEM-2100 transmission electron microscopy (TEM) and electron back-scattered diffraction (EBSD) technology. The results show that (1) the magnetic properties could be...

  • Effect of Particles on Continuous and Discontinuous Recrystallization of Nanostructured Interstitial Free Steel. Jamaati, Roohollah; Toroghinejad, Mohammad; Amirkhanlou, Sajjad; Edris, Hossein // JOM: The Journal of The Minerals, Metals & Materials Society (TM;Jan2016, Vol. 68 Issue 1, p271 

    In this study, the effect of micro- and nano- particles on continuous and discontinuous dynamic recrystallization (DDRX) of nanostructured interstitial free (IF) steel was investigated. Microstructural observations were performed by scanning transmission electron microscopy. It was found that...

  • Swift Heavy Ion Beam-induced Recrystallisation of Buried Silicon Nitride Layer. Som, T.; Sinha, O. P.; Ghatak, J.; Satpati, B.; Kanjilal, D. // Defence Science Journal;2009, Vol. 59 Issue 4, p351 

    Studies on MeV heavy ion beam-induced epitaxial crystallisation of a buried silicon nitride layer are reported. Transmission electron micrographs and selected area diffraction patterns have been used to study the recrystallisation of an ion beam-synthesised layer. Complete recrystallisation of...

  • Spatial distribution of cavities in silicon formed by ion implantation generated excess vacancies. Peeva, A.; Kögier, R.; Skorupa, W.; Christensen, J. S.; Kuznetsov, A. Yu. // Journal of Applied Physics;5/1/2004, Vol. 95 Issue 9, p4738 

    The spatial distribution of nanosized cavities in silicon formed by high energy Ge ion implantation and annealing is determined. The cavities are directly observed by transmission electron microscopy without any metal decoration. They are shown to be the agglomerates of implantation-induced...

  • High resolution transmission electron microscopy study of Se+-implanted and annealed GaAs: Mechanisms of amorphization and recrystallization. Sadana, D. K.; Sands, T.; Washburn, J. // Applied Physics Letters;1984, Vol. 44 Issue 6, p623 

    High resolution transmission electron microscopy (HRTEM) has been applied to the study of amorphization and recrystallization mechanisms in Se+-implanted (100) GaAs. Selenium dose of 1×1014 cm-2 at 450 keV (projected range 1550 Å) produced an amorphous band in the depth range 250-2150...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics