TITLE

Capless rapid thermal annealing of Si+-implanted InP

AUTHOR(S)
Woodhouse, J. D.; Gaidis, M. C.; Donnelly, J. P.; Armiento, C. A.
PUB. DATE
July 1987
SOURCE
Applied Physics Letters;7/20/1987, Vol. 51 Issue 3, p186
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
An enhanced-overpressure capless annealing technique suitable for annealing ion-implanted InP at temperatures of 900 °C is described. The technique utilizes a Sn-coated InP wafer and is based on the same principle as the In-Sn-P liquid-solution method for eliminating InP surface degradation prior to epitaxial growth. InP samples implanted with 140 keV, 1014 cm-2 Si+ and annealed at 900 °C for 10 s exhibited improved electrical characteristics over samples annealed at 750 °C for 5 min using conventional encapsulation techniques.
ACCESSION #
9823561

 

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