Capless rapid thermal annealing of Si+-implanted InP

Woodhouse, J. D.; Gaidis, M. C.; Donnelly, J. P.; Armiento, C. A.
July 1987
Applied Physics Letters;7/20/1987, Vol. 51 Issue 3, p186
Academic Journal
An enhanced-overpressure capless annealing technique suitable for annealing ion-implanted InP at temperatures of 900 °C is described. The technique utilizes a Sn-coated InP wafer and is based on the same principle as the In-Sn-P liquid-solution method for eliminating InP surface degradation prior to epitaxial growth. InP samples implanted with 140 keV, 1014 cm-2 Si+ and annealed at 900 °C for 10 s exhibited improved electrical characteristics over samples annealed at 750 °C for 5 min using conventional encapsulation techniques.


Related Articles

  • In situ thermal annealing of InP amorphous layer induced by Si+ implantation. Zheng, P.; Ruault, M.-O.; Denanot, M. F.; Descouts, B.; Krauz, P. // Journal of Applied Physics;1/1/1991, Vol. 69 Issue 1, p197 

    Investigates recrystallization during thermal annealing of indium phosphide (InP). Factor affecting the electrical properties of an ion implanted material; Aftereffects of InP epitaxial regrowth; Implication of the presence of faulted loops among perfect dislocation loops.

  • Luminescence study of rapid lamp annealing of Si-implanted InP. Kirillov, D.; Merz, J. L.; Kalish, R.; Shatas, S. // Journal of Applied Physics;1/15/1985, Vol. 57 Issue 2, p531 

    Describes the band-to-band luminescence of ion-implanted indium phosphide after rapid lamp annealing. Technique for obtaining important information on the rapid lamp annealing of ion-implanted semiconductors; Features of such technique; Defects produced by ion implantation at low or elevated...

  • Controlling the wavelength of InGaAs/GaAs/InGaP lasers by ion implantation. Akhlestina, S. A.; Vasil'ev, V. K.; Vikhrova, O. V.; Danilov, Yu. A.; Zvonkov, B. N.; Nekorkin, S. M. // Technical Physics Letters;Feb2010, Vol. 36 Issue 2, p189 

    The possibility of controlling the wavelength of emission from an InGaAs/GaAs/InGaP laser heterostructure with strained quantum wells (QWs) using medium-energy proton implantation followed by thermal annealing has been studied. It is established that the optimum proton energy is related to the...

  • Identification of the residual acceptors in undoped high purity InP. Skromme, B. J.; Stillman, G. E.; Oberstar, J. D.; Chan, S. S. // Applied Physics Letters;1984, Vol. 44 Issue 3, p319 

    The ionization energies of C, Be, and Mg acceptors in InP have been determined by means of low-temperature (1.7-20 K) photoluminescence measurements on high purity epitaxial and bulk samples which have been implanted with low (5×109-5×1011 cm-2) doses of those impurities. The measured...

  • Channeled substrate buried heterostructure InGaAsP/InP laser employing a buried Fe ion implant for current confinement. Wilt, D. P.; Schwartz, B.; Tell, B.; Beebe, E. D.; Nelson, R. J. // Applied Physics Letters;1984, Vol. 44 Issue 3, p290 

    A channeled substrate buried heterostructure InGaAsP/InP laser is demonstrated using a hybrid technique of Fe ion implantation followed by liquid phase epitaxy. A high resistivity region is formed by the implantation and subsequent anneal of Fe into an n-type InP substrate, and this is used to...

  • Indium Phosphide ICs Complement CMOS. Raghavan, Gopal // Siliconindia;Jun2003, Vol. 7 Issue 5, p38 

    Discusses the use of indium phosphide in high-speed optoelectronic applications. Characteristics of indium phosphide; Difference from other semiconductors; Other applications of indium phosphide.

  • High-speed InP optoelectronic switch with a tandem structure. Hori, Yoshikazu; Paslaski, Joel; Yi, Maobin; Yariv, Amnon // Applied Physics Letters;4/15/1985, Vol. 46 Issue 8, p749 

    A tandem-structure InP-optoelectronic switch has been fabricated and studied. This optoelectronic switch is capable of generating short electrical pulses, as well as varying the duration of electrical pulses between 40 and 400 ps (full width at half-maximum). The duration of the electrical...

  • Intervalence band absorption in InP and related materials for optoelectronic device modeling. Taylor, Jason; Tolstikhin, Valery // Journal of Applied Physics;2/1/2000, Vol. 87 Issue 3, p1054 

    Presents information on a study which calculated the intervalence band absorption (IVBA) spectra of indium phosphide and related materials for optoelectronic device modeling. Formulation of IVBA coefficient; Numerical results and discussion; Conclusions.

  • Improved reliability of red GaInP vertical-cavity surface-emitting lasers using bias-induced annealing. Herrick, Robert W.; Petroff, Pierre M. // Applied Physics Letters;4/13/1998, Vol. 72 Issue 15 

    We have used a bias-induced annealing process to improve the initial performance and the reliability of red (680 nm) Ga[sub .46]In[sub .54]P vertical-cavity surface-emitting lasers. Measurements showed improved cathodoluminescence efficiency and increased current collection efficiency after the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics