Ultrahigh relaxation oscillation frequency (up to 30 GHz) of highly p-doped GaAs/GaAlAs multiple quantum well lasers

Uomi, K.; Mishima, T.; Chinone, N.
July 1987
Applied Physics Letters;7/13/1987, Vol. 51 Issue 2, p78
Academic Journal
We have demonstrated a relaxation oscillation frequency (fr) of up to 30 GHz in highly p-doped (Be=1×1019 cm-3) GaAs/GaAlAs multiple quantum well (MQW) lasers grown by molecular beam epitaxy. This is the highest fr achieved at room temperature for III-V semiconductor lasers. The high fr is attained by the large differential gain in the p-doped MQW structure having a low threshold electron density resulted from the excess hole density in addition to the quantum size effect.


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