Nonlinear spectroscopy in In0.53Ga0.47As/InP multiple quantum wells

Tai, K.; Hegarty, J.; Tsang, W. T.
July 1987
Applied Physics Letters;7/13/1987, Vol. 51 Issue 2, p86
Academic Journal
Near-band-gap optical nonlinearity in In0.53Ga0.47As/InP multiple quantum well (MQW) structures is studied by a combination of nonlinear absorption, pump-and-probe, and forward degenerate four-wave mixing experiments. Near complete saturation of the n=1 heavy-hole exciton is observed for the first time in In0.53Ga0.47As/InP MQW structures. Nonlinear susceptibility χ(3) is found to be 0.08 esu, which is about the same as that for GaAs/GaAlAs MQW structures. Saturation intensity is 200 W/cm2.


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