TITLE

Degradation of GaAs lasers grown by metalorganic chemical vapor deposition on Si substrates

AUTHOR(S)
van der Ziel, J. P.; Dupuis, R. D.; Logan, R. A.; Pinzone, C. J.
PUB. DATE
July 1987
SOURCE
Applied Physics Letters;7/13/1987, Vol. 51 Issue 2, p89
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Using pulsed current excitation we have studied the rapid degradation of the laser properties of low-threshold-graded refractive-index single quantum well GaAs lasers grown by metalorganic vapor deposition on Si substrates. The degradation results from the growth of nonradiative regions in the active layer, resulting in rapid increase in threshold with time. The stimulated emission is quenched ∼1–5 μs after the start of the current pulse preventing continuous operation at 300 K. The degradation process is similar to that observed in similar lasers grown on GaAs substrates and occurs very rapidly due to the presence of a high density of defects and thermally induced strain.
ACCESSION #
9823542

 

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics