Relation between chirp and linewidth reduction in external Bragg reflector semiconductor lasers

Olsson, N. A.; Henry, C. H.; Kazarinov, R. F.; Lee, H. J.; Johnson, B. H.
July 1987
Applied Physics Letters;7/13/1987, Vol. 51 Issue 2, p92
Academic Journal
A 1.5-μm single longitudinal mode semiconductor laser, formed by butt coupling an external Bragg reflector to a standard Fabry–Perot laser, is shown to have greatly reduced wavelength chirp and emission linewidth. The linewidth reduction is found to be proportional to the square of the chirp reduction, in agreement with a previous theoretical prediction. The linewidth and chirp reduction factor can be varied by changing the operating point of the laser. With a 3-mm-long Bragg reflector, a linewidth of 1 MHz at 5 mW has been achieved.


Related Articles

  • Stable single mode hybrid laser with high power and narrow linewidth. Morton, P.A.; Mizrahi, V. // Applied Physics Letters;5/16/1994, Vol. 64 Issue 20, p2634 

    Describes hybrid lasers combining a semiconductor gain section and fiber cavity with integrated chirped Bragg reflector. Output powers produced by the devices; Use of a chirped reflector to stabilize the single mode output; Side-mode suppression ratio of the laser output.

  • Monolithically integrated surface and substrate emitting vertical cavity lasers for smart pixels. Bond, Aaron E.; Dapkus, P. Daniel // Applied Physics Letters;7/6/1998, Vol. 73 Issue 1 

    The authors present a way to monolithically integrate surface—and substrate—emitting vertical cavity surface emitting lasers (VCSELs) on a single substrate for use in smart pixel applications. Spatially selective oxidation is used to adjust the reflectivity of distributed Bragg...

  • Single mode broad area distributed Bragg reflector ring oscillators. Dzurko, Kenneth M.; Scifres, Donald R. // Applied Physics Letters;11/16/1992, Vol. 61 Issue 20, p2389 

    Demonstrates the distributed Bragg reflector (DBR) semiconductor ring laser. Development of high power low divergence coherent laser diodes; Selection of a single broad area mode oscillating at a single wavelength; Measurement of the ultimate utility of DBR ring oscillators by the degree of...

  • Edge-emitting quantum well laser with Bragg reflectors. Yang, F.; Blood, P. // Applied Physics Letters;5/29/1995, Vol. 66 Issue 22, p2949 

    Reports the fabrication of edge-emitting GaAs/AlGaAs quantum well lasers with multilayer Bragg reflectors. Comparison of the laser with an equivalent alloy structure; Reduction of the spontaneous recombination current; Inhibition of emission and photon recycling.

  • Single-longitudinal-mode stabilized graded-index-rod external coupled-cavity laser. Liou, K-Y.; Burrus, C. A.; Linke, R. A.; Kaminow, I. P.; Granlund, S. W.; Swan, C. B.; Besomi, P. // Applied Physics Letters;1984, Vol. 45 Issue 7, p729 

    An active-passive coupled-cavity semiconductor laser using a slightly shorter than 1/4 pitch graded-index-rod lens reflector as the external cavity has been demonstrated. The graded-index lens is prepared from an optical fiber waveguide. We report (1) stable single-longitudinal-mode operation of...

  • Efficient GaInNAs Gain Mirrors for Semiconductor Disk Lasers at 1.18 μm and 1.22 μm. Korpijärvi, Ville-Markus; Puustinen, Janne; Leinonen, Tomi; Rautiainen, Jussi; Härkönen, Antti; Hakkarainen, Teemu; Guina, Mircea // AIP Conference Proceedings;11/10/2010, Vol. 1288 Issue 1, p196 

    We report two GaInNAs/GaAs semiconductor disk lasers emitting at the wavelengths of 1180 nm and 1220 nm. The lasers generated 5 W and 7 W output powers, respectively, at a mount temperature of 15° C. Both the gain mirrors were grown by molecular beam epitaxy and consisted of a GaAs/AlAs...

  • Distributed Bragg reflector assisted low-threshold ZnO nanowire random laser diode. Jian Huang; Morshed, Muhammad Monzur; Zheng Zuo; Jianlin Liu // Applied Physics Letters;3/31/2014, Vol. 104 Issue 13, p1 

    An electrically pumped nitrogen doped p-type ZnO nanowires/undoped n-type ZnO thin film homojunction random laser with a 10-period SiO2/SiNx distributed Bragg reflector is demonstrated. The formation of p-n homojunction is confirmed by the current-voltage and photocurrent characteristics. The...

  • Vertical-cavity in-plane heterostructures: Physics and applications. Taghizadeh, Alireza; Mørk, Jesper; Il-Sug Chung // Applied Physics Letters;11/2/2015, Vol. 107 Issue 18, p1 

    We show that in-plane (lateral) heterostructures realized in vertical cavities with high contrast grating reflectors can be used to significantly modify the anisotropic dispersion curvature, also interpreted as the photon effective mass. This design freedom enables exotic configurations of...

  • Silicon-photonics light source realized by III-V/Si-grating-mirror laser. Chung, Il-Sug; Mo\rk, Jesper // Applied Physics Letters;10/11/2010, Vol. 97 Issue 15, p151113 

    A III-V/Si vertical-cavity in-plane-emitting laser structure is suggested and numerically investigated. This hybrid laser consists of a distributed Bragg reflector, a III-V active region, and a high-index-contrast grating (HCG) connected to an in-plane output waveguide. The HCG and the output...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics