TITLE

GaAs-AlAs monolithic microresonator arrays

AUTHOR(S)
Jewell, J. L.; Scherer, A.; McCall, S. L.; Gossard, A. C.; English, J. H.
PUB. DATE
July 1987
SOURCE
Applied Physics Letters;7/13/1987, Vol. 51 Issue 2, p94
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Monolithic optical logic devices 1.5–5 μm across are defined by ion-beam assisted etching through a GaAs/AlAs Fabry–Perot structure grown by molecular beam epitaxy. They show reduced energy requirements (more than an order of magnitude smaller than the unetched heterostructure), uniform response over small arrays, negligible crosstalk at 3 μm center-center spacing, ∼150 ps recovery time, and thermal stability at 82 MHz operating frequency. All experiments were performed at room temperature.
ACCESSION #
9823538

 

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