Spectral photoconductivity in n-modulation-doped GaAs/AlGaAs quantum well structures

Höpfel, R. A.
July 1987
Applied Physics Letters;7/13/1987, Vol. 51 Issue 2, p106
Academic Journal
The in-plane photoconductivity of n-modulation-doped quantum well structures of GaAs/AlGaAs is experimentally studied as a function of the incident photon energy. Negative photoconductivity with surprising dependences on background illumination, temperature, and electric field is observed for photon energies slightly below the band gap of GaAs. The effect may be due to optical filling of ionized deep donors in AlGaAs as well as to an optical backgating effect. High positive photoconductivity is present above the band gaps—in contrast to theoretical expectations from previous optical transport experiments.


Related Articles

  • Excitonic effects in the photoconductivity of quantum-well Ga[sub x]In[sub 1-x] As/InP structures. Panov, M. F.; Pikhtin, A. N. // Semiconductors;Jul97, Vol. 31 Issue 7, p719 

    The photoconductivity spectra of quantum-well structures consisting of 50 alternating 7 to 12-mm-thick Ga[sub x]In[sub 1 - x]As (x = 0.47) layers forming quantum wells and 10 to 15-nm-thick InP barriers have been investigated. Characteristic excitonic peaks 11H, 11L, 13H, 22H, and 22L were...

  • Nature of persistent photoconductivity in GaAs0.7Sb0.3/GaAs multiple quantum wells. Chen, T. T.; Su, W. S.; Chen, Y. F.; Liu, P. W.; Lin, H. H. // Applied Physics Letters;8/30/2004, Vol. 85 Issue 9, p1526 

    The optoelectronic properties of undoped type-II GaAs0.7Sb0.3/GaAs (100) multiple quantum wells have been investigated by photoluminescence (PL), and photoconductivity measurements. Quite interestingly, persistent photoconductivity (PPC) has been discovered in this material. The decay kinetics...

  • Intersubband absorption in strained InxGa1-xAs/Al0.4Ga0.6As (0≤x≤0.15) multiquantum wells. Zhou, X.; Bhattacharya, P. K.; Hugo, G.; Hong, S. C.; Gulari, E. // Applied Physics Letters;2/27/1989, Vol. 54 Issue 9, p855 

    We report, for the first time, temperature-dependent intersubband absorption data in doped pseudomorphic InxGa1-xAs/Al0.4Ga0.6As (0≤x≤0.15) multiquantum wells. In this composition range the absorption resonance varies in the range 6–7 μm for 50 Å wells, which agrees...

  • Electrostatic Model of Band-Gap Renormalization and the Photoluminescence Line Shape in a GaAs/AlGaAs Two-Dimensional Layer at a High Excitation Level. Poklonski, N. A.; Siaglo, A. I. // Physics of the Solid State;Jan2001, Vol. 43 Issue 1, p157 

    An electrostatic model for calculating the band-gap renormalization in a two-dimensional (2D) semiconductor layer (quantum well) due to the Coulomb interaction between nonequilibrium charge carriers has been proposed. Consideration is given only to the first quantum-well energy levels for...

  • GaSb/GaInSb quantum wells grown by metalorganic vapor phase epitaxy. Haywood, S. K.; Chidley, E. T. R.; Mallard, R. E.; Mason, N. J.; Nicholas, R. J.; Walker, P. J.; Warburton, R. J. // Applied Physics Letters;3/6/1989, Vol. 54 Issue 10, p922 

    Single and multiple quantum wells of GaSb/GaInSb were grown by metalorganic vapor phase epitaxy. X-ray diffraction on an 80 Å single well confirmed the Ga1-xInxSb composition to be x=0.15, for which the lattice mismatch is ≊1.0%. Photoluminescence and photoconductivity from this sample...

  • Erratum: Ultrafast absorption recovery due to stimulated emission in GaAs/AlGaAs multiple quantum wells [Appl. Phys. Lett. 50, 821 (1987)]. Dubard, J.; Oudar, J. L.; Alexandre, F.; Hulin, D.; Orszag, A. // Applied Physics Letters;6/8/1987, Vol. 50 Issue 23, p1696 

    Presents the corrected portion of the article 'Ultrafast Absorption Recovery Due to Stimulated Emission in GaAs/AlGaAs multiple quantum wells,' which appeared in a 1987 issue of the 'Applied Physics Letters.'

  • Effect of pressure on the 2D carrier concentration in GaSb/InAs/GaSb quantum well system. Voronovskii, A. N.; Dizhur, E. M.; Itskevich, E. S.; Kashirskaya, L. M.; Stradling, R. A. // Physics of the Solid State;Apr97, Vol. 39 Issue 4, p637 

    Measurements of magnetoresistance and Hall emf have been carried out on GaSb/InAs/GaSb quantum wells of different thickness and with interfaces of different types in fields up to 7 T and at pressures up to 2.5 GPa at 4.2 K. The pressure dependence of the electron and hole concentrations was...

  • Organometallic vapor phase epitaxial growth and characterization of GaInP/AlInP quantum wells on... Wang, T.Y.; Welch, D.F. // Applied Physics Letters;2/24/1992, Vol. 60 Issue 8, p1007 

    Investigates the organometallic vapor phase epitaxial growth and characterization of GaInP/AlInP quantum wells (QW) on a gallium arsenide substrate deducted using ethyldimethylindium. Evidence on an increased peak energy and linewidth narrowing; Influence of low-temperature photoluminescence on...

  • Strained quaternary quantum well lasers for high temperature operation. Temkin, H.; Coblentz, D.; Logan, R.A.; Vanderberg, J.M.; Yadvish, R.D.; Sergent, A.M. // Applied Physics Letters;10/25/1993, Vol. 63 Issue 17, p2321 

    Investigates strained quaternary quantum well lasers optimized for high temperature operation. Effects of temperature ranging from 25 to 85 degree Celsius on the slope efficiency of the lasers; Light-current characteristics of a strained gallium-indium-arsenic-phosphorus quantum well laser;...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics