TITLE

Low-temperature annealing characteristics of the lightly arsenic-doped polycrystalline silicon

AUTHOR(S)
Yang, Chaosu
PUB. DATE
July 1987
SOURCE
Applied Physics Letters;7/13/1987, Vol. 51 Issue 2, p112
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Low-temperature annealing characteristics of the lightly arsenic-doped polycrystalline silicon have been studied. It was found that, when the silicon dioxide layer covered on the polycrystalline silicon was moved after high-temperature processing and the polycrystalline silicon was annealed at low temperature, the conductance of the films would increase from one to four orders in magnitude. A possible mechanism for the interaction of the free oxygen in SiO2 with grain boundary is discussed.
ACCESSION #
9823529

 

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