AlGaAs/GaAs double barrier diodes with high peak-to-valley current ratio

Huang, C. I.; Paulus, M. J.; Bozada, C. A.; Dudley, S. C.; Evans, K. R.; Stutz, C. E.; Jones, R. L.; Cheney, M. E.
July 1987
Applied Physics Letters;7/13/1987, Vol. 51 Issue 2, p121
Academic Journal
We report the largest peak-to-valley current (PVC) ratios to date from AlGaAs/GaAs double barrier (either alloy barrier or superlattice barrier) diodes. PVC ratios as high as 3.6 and 21.7 were obtained from an AlAs/GaAs superlattice barrier structure at 300 and 77 K, respectively. In an alloy barrier structure with x=0.42 (x=0.3), PVC ratios of 3.9 (2.2) and 14.3 (7.0) were observed at 300 and 77 K, respectively. We attribute these excellent results to a ‘‘two-step’’ spacer layer incorporated in the devices studied which facilitated the growth of high material quality.


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