Elastic strains in CdTe-GaAs heterostructures grown by metalorganic chemical vapor deposition

Olego, D. J.; Petruzzello, J.; Ghandhi, S. K.; Taskar, N. R.; Bhat, I. B.
July 1987
Applied Physics Letters;7/13/1987, Vol. 51 Issue 2, p127
Academic Journal
The elastic response associated with the lattice mismatch in (100)CdTe||(100)GaAs heterostructures was investigated by performing photoluminescence measurements as a function of CdTe layer thicknesses. The heterostructures were grown by metalorganic chemical vapor deposition. Estimates of strains, stresses, and lattice constants were obtained from shifts in near-band-edge photoluminescence features. Biaxial compressive strains are present in CdTe layers thinner than 1 μm. The magnitudes of the strains are larger than those expected from equilibrium models and from transmission electron microscopy results. With increasing CdTe layer thicknesses above 0.1 μm biaxial tensile strains affect the GaAs surfaces.


Related Articles

  • Growth of (111) CdTe on tilted (001) GaAs. Cibert, J.; Gobil, Y.; Saminadayar, K.; Tatarenko, S.; Chami, A.; Feuillet, G.; Dang, Le Si; Ligeon, E. // Applied Physics Letters;2/27/1989, Vol. 54 Issue 9, p828 

    Twin-free growth of (111) CdTe on (001) GaAs is reported for substrates tilted around the [110] axis, i.e., exposing Ga dangling bonds at the terrace edges. Layers grown on nominally (001) substrates and tilted substrates are characterized by double crystal x-ray diffraction, low-temperature...

  • GaAs in GaSb: Strained Nanostructures for Mid-Infrared Optoelectronics. Solov’ev, V. A.; Toropov, A. A.; Meltser, B. Ya.; Terent’ev, Ya. A.; Kyutt, R. N.; Sitnikova, A. A.; Semenov, A. N.; Ivanov, S. V.; Motlan; Goldys, E. M.; Kop’ev, P. S. // Semiconductors;Jul2002, Vol. 36 Issue 7, p816 

    Molecular beam epitaxy was used for the first time to grow novel GaAs/GaSb heterostructures with ultrathin (0.8-3 monolayers) GaAs layers embedded in GaSb. These structures were studied by X-ray diffraction, transmission electron microscopy, and photoluminescence. By contrast to known structures...

  • Low-temperature photoluminescence from CdTe grown by hot-wall epitaxy on GaAs. Lischka, K.; Schmidt, T.; Pesek, A.; Sitter, H. // Applied Physics Letters;9/18/1989, Vol. 55 Issue 12, p1220 

    The low-temperature near-band-edge photoluminescence of thick (d≊36 μm) (100)CdTe epilayers grown on (100)GaAs substrates is investigated. Besides a dominating bound exciton emission, evidence for free-exciton emission (n=1 and 2) and two electron transitions (TETs) of donor-bound...

  • X-ray photoelectron spectroscopy studies of initial growth mechanism of CdTe layers grown on (100)GaAs by organometallic vapor phase epitaxy. Sone, Syuji; Ekawa, Mitsuru; Yasuda, Kazuhito; Sugiura, Yoshiyuki; Saji, Manabu; Tanaka, Akikazu // Applied Physics Letters;2/5/1990, Vol. 56 Issue 6, p539 

    Variations of the GaAs surface conditions and the adsorption of the precursor elements of Cd and Te on the (100)GaAs substrate were studied by x-ray photoelectron spectroscopy at the initial stage of CdTe growth by organometallic vapor phase epitaxy. The stoichiometry of GaAs substrates was...

  • Long-term relaxation of the photovoltage in a heteroepitaxial structure. Shekhovtsov, L. V.; Semenova, G. N.; Venger, E. F.; Sachenko, A. V.; Sadof’ev, Yu. G. // Technical Physics Letters;Jun97, Vol. 23 Issue 6, p430 

    The distribution of the transverse photovoltage has been investigated in samples of a Ge-GaAs heterostructure with an oxide layer (∼15 Å) at the interface. A method of simultaneous excitation with modulated and unmodulated radiation is used to observe the long-term relaxation of the...

  • Physical origin of negative persistent photoconductivity in a GaAs-AlAs/GaAs single heterojunction. Prasad, S. // Journal of Applied Physics;5/1/2001, Vol. 89 Issue 9, p4907 

    When a Si-doped GaAs-AlAs/GaAs heterostructure is illuminated with 1.98 eV light at 4.2 K, a reduction in the two-dimensional (2D) electron density (n[sub 2D]) is observed. This reduction is followed at times by a small increase in n[sub 2D] even after the illumination has been switched off....

  • Is the observed quantized conductance on small contacts due to coherent ballistic transport? Escapa, L.; García, N. // Applied Physics Letters;3/5/1990, Vol. 56 Issue 10, p901 

    This letter revises the interpretation of recent experiments showing quantized conductance on GaAs/GaAlAs constrictions or point contacts in terms of coherent ballistic and sequential transport. Our calculations show by using a first iterative self-consistent procedure that the experimental data...

  • High resolution electron microscope study of epitaxial CdTe-GaAs interfaces. Otsuka, N.; Kolodziejski, L. A.; Gunshor, R. L.; Datta, S.; Bicknell, R. N.; Schetzina, J. F. // Applied Physics Letters;5/1/1985, Vol. 46 Issue 9, p860 

    CdTe films have been grown on (100) GaAs substrates with two different epitaxial relations: (111)CdTe(100)GaAs and (100)CdTe(100)GaAs. High resolution electron microscope observation of these two types of interfaces was carried out in order to investigate the role of the substrate surface...

  • Excimer laser-assisted metalorganic vapor phase epitaxy of CdTe on GaAs. Zinck, J. J.; Brewer, P. D.; Jensen, J. E.; Olson, G. L.; Tutt, L. W. // Applied Physics Letters;4/25/1988, Vol. 52 Issue 17, p1434 

    We have successfully grown CdTe (111) on GaAs (100) at 165 °C using a 248 nm excimer laser to photodissociate dimethylcadmium and diethyltellurium in the gas phase. Good crystalline quality of the layers is confirmed by x-ray diffractometry. Growth rates up to 2 μm/h have been recorded in...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics