TITLE

Novel photochemical vapor deposition reactor for amorphous silicon solar cell deposition

AUTHOR(S)
Rocheleau, Richard E.; Hegedus, Steven S.; Buchanan, Wayne A.; Jackson, Scott C.
PUB. DATE
July 1987
SOURCE
Applied Physics Letters;7/13/1987, Vol. 51 Issue 2, p133
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A novel photochemical vapor deposition (photo-CVD) reactor having a flexible ultraviolet-transparent Teflon curtain and a secondary gas flow to eliminate deposition on the window has been used to deposit amorphous silicon films and p-i-n solar cells. The background levels of atmospheric contaminants (H2O, CO2, N2) depend strongly on the vacuum procedures but not on the presence of a Teflon curtain in the reactor. Intrinsic films with a midgap density of states of 3×1015 eV-1 cm-3 and all-photo-CVD pin solar cells with efficiencies of 8.5% have been deposited.
ACCESSION #
9823516

 

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