TITLE

Localization of degradation in InP/InGaAsP mushroom stripe lasers

AUTHOR(S)
Jung, H.; Marschall, P.
PUB. DATE
July 1987
SOURCE
Applied Physics Letters;7/13/1987, Vol. 51 Issue 2, p72
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The rapid degradation observed in InP/InGaAsP mushroom stripe lasers covered with phosphosilicate glass (PSG) was investigated by comparing the light-current characteristics as a function of the preparation technique. We were able to show that the PSG-covering layer is not the reason for the rapid degradation. By inspecting the light-current characteristics before and after degradation and by additional underetching the laser structure after degradation we were able to localize the degraded regions on the open side walls of the InGaAsP active layer.
ACCESSION #
9823495

 

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