GaAs traveling-wave polarization electro-optic waveguide modulator with bandwidth in excess of 20 GHz at 1.3 μm

Wang, S. Y.; Lin, S. H.; Houng, Y. M.
July 1987
Applied Physics Letters;7/13/1987, Vol. 51 Issue 2, p83
Academic Journal
We report a 1.3-μm GaAs traveling-wave electro-optic waveguide modulator with a 3-dB optical bandwidth in excess of 20 GHz. The bandwidth was determined by directly detecting the modulated optical signal with a high-speed InP/GaInAs photodiode. The modulator has a coplanar strip electrode configuration with a double heterojunction Al0.032Ga0.968As/GaAs/Al0.032Ga0.968As optical guide grown by low-pressure organometallic vapor phase epitaxy.


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