TITLE

Model for bulk effects on Si interstitial diffusivity in silicon

AUTHOR(S)
Griffin, P. B.; Ahn, S. T.; Tiller, W. A.; Plummer, J. D.
PUB. DATE
July 1987
SOURCE
Applied Physics Letters;7/13/1987, Vol. 51 Issue 2, p115
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Literature values for the diffusivity of the silicon interstitial or interstitialcy, I, range over several orders of magnitude and have activation energies between 1 and 4 eV. We propose a model for bulk trapping effects on the I diffusivity which provides a consistent explanation for the observed discrepancies. It reconciles the effects of different materials (float-zone, Czochralski, and epitaxial silicon) and processes (diffusion and gettering) on the apparent value of the I diffusivity. New experimental results which directly indicate substantial bulk effects in different types of silicon support the validity of the model.
ACCESSION #
9823488

 

Related Articles

  • Charge trapping in light-emitting SiO[sub 2] layers implanted with Ge[sup +] ions. Gebel, T.; Rebohle, L.; Skorupa, W.; Nazarov, A. N.; Osiyuk, I. N.; Lysenko, V. S. // Applied Physics Letters;9/30/2002, Vol. 81 Issue 14, p2575 

    The trapping effects of negative and positive charge in Ge-enriched SiO[sub 2] layers during high-field electron injection from the Si substrate of A1-SiO[sub 2]-Si structures are studied. The capture cross section and the concentration of negatively and positively charged traps are estimated...

  • Thermally generated electron traps in boron-implanted, phosphorus-doped silicon. Jackson, Daniel B.; Sah, C. T. // Journal of Applied Physics;9/15/1985, Vol. 58 Issue 6, p2225 

    Presents a study which observed thermally generated electron traps in boron-implanted, phosphorus-doped silicon. Method of the study; Results and discussion; Conclusion.

  • Growth of hydrogenated Si clusters using a quadrupole ion trap. Murakami, Hirohiko; Kanayama, Toshihiko // Applied Physics Letters;10/16/1995, Vol. 67 Issue 16, p2341 

    Investigates the effect of hydrogenation on the stability of small silicon cluster ions. Utilization of ion trap in growing silicon clusters; Measurement of the cluster spectra; Discovery of the presence of several stable structures.

  • Subthreshold slope in polycrystalline silicon thin-film transistors and effect of the gate oxide.... Dimitriadis, C.A. // Applied Physics Letters;12/18/1995, Vol. 67 Issue 25, p3738 

    Develops an expression for inverse subthreshold slope in polycrystalline silicon thin-film transistors. Determination of the subthreshold characteristics by reducing silica thickness; Influence of trapping states at the grain boundaries, grain size and gate oxide; Effect of the gate oxides on...

  • An analytic model for calculating trapped charge in amorphous silicon. Shaw, John G.; Hack, Michael // Journal of Applied Physics;11/1/1988, Vol. 64 Issue 9, p4562 

    Presents a study that proposed an analytical model for calculating the trapped-charge density as a function of free-carrier concentration for realistic density-of-states distributions in hydrogenated amorphous silicon films. Factors to consider in electronic transport in amorphous silicon;...

  • Three types of stable structures of hydrogenated silicon clusters. Watanabe, M.O.; Murakami, H. // Applied Physics Letters;9/1/1997, Vol. 71 Issue 9, p1207 

    Examines the stable structures of hydrogenated silicon clusters from silane gas in an ion trap for cluster growth. Extraction of grown clusters from the ion trap through different pathways; Application of mass spectrometers to cluster analysis; Description of the clusters.

  • Dependence of charge trapped on nanocrystals and electron transport on excess Si in silicon -rich SiO2. Antonova, I. V.; Gulyaev, M. B.; Yanovitskaya, Z. S.; Goldstein, Y.; Jedrzejewski, J. // AIP Conference Proceedings;2007, Vol. 893 Issue 1, p785 

    The system of silicon nanocrystals embedded in SiO2 was characterized by electrical measurements depending on the excess Si content in oxide ranged from 6 to 74%. Electron transport through the oxide after percolation transient demonstrates the activation character of current at T > 230 K with...

  • Influence of crystal defects on the piezoresistive properties of 3C–SiC. Eickhoff, M.; Stutzmann, M. // Journal of Applied Physics;9/1/2004, Vol. 96 Issue 5, p2878 

    We present a model for the quantitative assessment of the influence of crystal defects on the piezoresistive properties of n-type cubic silicon carbide. In an extended carrier trapping model, the strain dependent transport at potential barriers formed by electrons in defect states at internal...

  • Origin of trapping in multicrystalline silicon. Gundel, Paul; Schubert, Martin C.; Warta, Wilhelm // Journal of Applied Physics;Oct2008, Vol. 104 Issue 7, p073716 

    Defect sites in silicon, which temporarily capture excess charge carriers (traps), are a promising source of information on defect structures relevant for photovoltaic application of the material. In this work the correlation between traps in p-type silicon, structural crystal defects, and...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics