Model for bulk effects on Si interstitial diffusivity in silicon

Griffin, P. B.; Ahn, S. T.; Tiller, W. A.; Plummer, J. D.
July 1987
Applied Physics Letters;7/13/1987, Vol. 51 Issue 2, p115
Academic Journal
Literature values for the diffusivity of the silicon interstitial or interstitialcy, I, range over several orders of magnitude and have activation energies between 1 and 4 eV. We propose a model for bulk trapping effects on the I diffusivity which provides a consistent explanation for the observed discrepancies. It reconciles the effects of different materials (float-zone, Czochralski, and epitaxial silicon) and processes (diffusion and gettering) on the apparent value of the I diffusivity. New experimental results which directly indicate substantial bulk effects in different types of silicon support the validity of the model.


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