Effect of deposition process on the thin-film ZnS/p-Si interface

Sands, D.; Brunson, K. M.; Thomas, C. B.; Reehal, H. S.
July 1987
Applied Physics Letters;7/6/1987, Vol. 51 Issue 1, p21
Academic Journal
Thin films of ZnS have been deposited on p-Si by evaporation, radio-frequency sputtering, and magnetron sputtering to form metal-insulator-semiconductor structures. The 1 MHz admittance-voltage characteristics of each have been compared for a qualitative study of the ZnS/p-Si interface. It is shown that radio-frequency sputtering results in Fermi-level pinning, which is ascribed to the presence of silicon dangling bonds caused by radiation damage. It is argued that this damage is advantageous for ZnS/p-Si electroluminescent diodes.


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