Stable continuous room-temperature laser operation of AlxGa1-xAs-GaAs quantum well heterostructures grown on Si

Nam, D. W.; Holonyak, N.; Hsieh, K. C.; Kaliski, R. W.; Lee, J. W.; Shichijo, H.; Epler, J. E.; Burnham, R. D.; Paoli, T. L.
July 1987
Applied Physics Letters;7/6/1987, Vol. 51 Issue 1, p39
Academic Journal
Data are presented demonstrating stable room-temperature continuous (cw) photopumped laser operation of an AlxGa1-xAs-GaAs quantum well heterostructure (QWH) grown on Si by a combination of molecular beam epitaxy and metalorganic chemical vapor deposition. The cw 300 K laser operation of the single well AlxGa1-xAs-GaAs QWH occurs at an excitation threshold of 6.7×103 W/cm2 (Jeq=2.8×103 A/cm2), or a factor of 10 lower than similar multiple well QWH’s. The laser operation is stable for four (or more) hours, the length of the ‘‘test.’’


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