Stable continuous room-temperature laser operation of AlxGa1-xAs-GaAs quantum well heterostructures grown on Si

Nam, D. W.; Holonyak, N.; Hsieh, K. C.; Kaliski, R. W.; Lee, J. W.; Shichijo, H.; Epler, J. E.; Burnham, R. D.; Paoli, T. L.
July 1987
Applied Physics Letters;7/6/1987, Vol. 51 Issue 1, p39
Academic Journal
Data are presented demonstrating stable room-temperature continuous (cw) photopumped laser operation of an AlxGa1-xAs-GaAs quantum well heterostructure (QWH) grown on Si by a combination of molecular beam epitaxy and metalorganic chemical vapor deposition. The cw 300 K laser operation of the single well AlxGa1-xAs-GaAs QWH occurs at an excitation threshold of 6.7×103 W/cm2 (Jeq=2.8×103 A/cm2), or a factor of 10 lower than similar multiple well QWH’s. The laser operation is stable for four (or more) hours, the length of the ‘‘test.’’


Related Articles

  • Index-guided AlxGa1-xAs-GaAs quantum well heterostructure lasers fabricated by vacancy-enhanced impurity-induced layer disordering from an internal (Si2)y(GaAs)1-y source. Guido, L. J.; Jackson, G. S.; Plano, W. E.; Hsieh, K. C.; Holonyak, N.; Burnham, R. D.; Epler, J. E.; Thornton, R. L.; Paoli, T. L. // Applied Physics Letters;3/9/1987, Vol. 50 Issue 10, p609 

    A unique form of Si impurity-induced layer disordering (Si IILD) is described that utilizes a ‘‘buried’’ Si source, a (Si2)y(GaAs)1-y barrier, and a patterned external source of column III vacancies, an SiO2 cap, to define the layer disordering. This form of Si IILD is...

  • Spectral and dynamic characteristics of buried-heterostructure single quantum well (Al,Ga)As lasers. Derry, P. L.; Chen, T. R.; Zhuang, Y. H.; Paslaski, J.; Mittelstein, M.; Vahala, K.; Yariv, A. // Applied Physics Letters;7/25/1988, Vol. 53 Issue 4, p271 

    We demonstrate that, as predicted, (Al,Ga)As single quantum well (SQW) lasers have substantially narrower spectral linewidths than bulk double-heterostructure lasers. We have observed a further major reduction (>3×) in the linewidth of these SQW lasers when the facet reflectivities are...

  • Mapping of local temperatures on mirrors of GaAs/AlGaAs laser diodes. Brugger, Hans; Epperlein, Peter W. // Applied Physics Letters;3/12/1990, Vol. 56 Issue 11, p1049 

    Spatially resolved Raman scattering measurements (<1 μm) have been performed to determine the surface temperature distribution on coated and uncoated facets of ridge-waveguided GaAs/AlGaAs single quantum well graded-index separate-confinement heterostructure lasers. A strong nonlinear...

  • Edge- and surface-emitting distributed Bragg reflector laser with multiquantum well active/passive waveguides. Kojima, Keisuke; Noda, Susumu; Mitsunaga, Kazumasa; Kyuma, Kazuo; Hamanaka, Koichi; Nakayama, Takashi // Applied Physics Letters;2/2/1987, Vol. 50 Issue 5, p227 

    A novel AlGaAs/GaAs distributed Bragg reflector laser utilizing a multiquantum well structure both as an active waveguide and as a low loss passive waveguide was fabricated. The threshold current was 102 mA at room temperature, and the differential quantum efficiency for the edge- and...

  • Absorption and emission of far-IR radiation by hot holes in GaAs/AlGaAs quantum wells. Vorob’ev, L. E.; Donetskii, D. V.; Golub, L. E. // JETP Letters;6/25/96, Vol. 63 Issue 12, p977 

    It is found that when holes in GaAs/Al0.5Ga0.5As quantum wells are heated by a longitudinal electric field, the absorption in the far-IR region of the spectrum changes. The spontaneous emission spectrum in the far-IR range is measured. It is shown that the absorption and emission are due to...

  • Large optical nonlinearities in a GaAs/AlGaAs hetero n-i-p-i structure. Kost, A.; Garmire, E.; Danner, A.; Dapkus, P. D. // Applied Physics Letters;2/22/1988, Vol. 52 Issue 8, p637 

    Light-induced changes in the absorption of a multiple quantum well hetero n-i-p-i structure at room temperature have been measured using a pump-probe method. Changes in the absorption coefficient in the quantum wells of more than 2000 cm-1 have been observed with pump intensities as small as 375...

  • Single quantum well photoluminescence in ZnSe/GaAs/AlGaAs grown by migration-enhanced epitaxy. Kobayashi, Naoki // Applied Physics Letters;9/18/1989, Vol. 55 Issue 12, p1235 

    Photoluminescence in ZnSe/GaAs/Al0.4Ga0.6As single quantum well heterostructures is reported for the first time. These structures are grown by migration-enhanced epitaxy, resulting in flat and abrupt ZnSe/GaAs heterointerfaces. The quantum size effect is clearly observed. Photoluminescence...

  • Stimulated emission from monolayer-thick AlxGa1-xAs-GaAs single quantum well heterostructures. Lee, J. H.; Hsieh, K. Y.; Hwang, Y. L.; Kolbas, R. M. // Applied Physics Letters;2/12/1990, Vol. 56 Issue 7, p626 

    Stimulated emission from a clearly defined quantum well transition has been observed from single quantum wells as thin as two monolayers (ML, 1 ML=2.83 Ã…). These results are unexpected since previous experimental and theoretical work has indicated that if the well width Lz is smaller than...

  • Stability of AlAs in AlxGa1-xAs-AlAs-GaAs quantum well heterostructures. Dallesasse, J. M.; Gavrilovic, P.; Holonyak, N.; Kaliski, R. W.; Nam, D. W.; Vesely, E. J.; Burnham, R. D. // Applied Physics Letters;6/11/1990, Vol. 56 Issue 24, p2436 

    Data are presented on the long-term (>=8 yr) degradation of AlxGa1-xAs-AlAs -GaAs quantum well heterostructure material because of the instability of underlying (internal) AlAs layers. Material containing thicker (>0.4 μm) AlAs ‘‘buried’’ layers (confining layers) is...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics