TITLE

Nonequilibrium electron transport in bipolar devices

AUTHOR(S)
Levi, A. F. J.; Yafet, Y.
PUB. DATE
July 1987
SOURCE
Applied Physics Letters;7/6/1987, Vol. 51 Issue 1, p42
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The dynamics of nonequilibrium electron transport in bipolar devices have been investigated by calculating minority-carrier elastic and inelastic scattering rates as a function of energy for different majority-carrier concentrations in typical p-type III-V semiconductors. Scattering rates depend on the majority-carrier concentration and a constraint involving the ratio of electron and heavy-hole effective mass.
ACCESSION #
9823458

 

Related Articles

  • Anharmonic effects on photo-induced electron transfer: A Redfield approach. Kalyanaraman, C.; Evans, D. G. // Journal of Chemical Physics;10/15/2001, Vol. 115 Issue 15 

    Photo-induced electron transfer experiments examine intrinsically nonequilibrium processes. A theoretical description of photoinduced processes should take into account the fact that the approximations and assumptions made for equilibrium electron transfer need not be appropriate. Under...

  • Electrical characteristics of lateral heterostructure organic field-effect bipolar transistors. Singh, Samarendra P.; Sonar, Prashant; Sellinger, Alan; Dodabalapur, Ananth // Applied Physics Letters;1/5/2009, Vol. 94 Issue 1, p013308 

    We describe and discuss the unique electrical characteristics of an organic field-effect transistor in which the active layer consists of a type II lateral heterojunction located approximately midway between the source and drain. The two active semiconductors on either side of the junction...

  • Chemical applications of binary (e,2e) spectroscopy. Brion, C. E.; Cooper, G.; Feng, R.; Tixier, S.; Zheng, Y.; McCarthy, I. E.; Shi, Z.; Wolfe, S. // AIP Conference Proceedings;2002, Vol. 604 Issue 1, p38 

    Binary (e,2e) spectroscopy (also known as EMS) is applied to problems of chemical interest including imaging of orbital electron densities, electron transfer processes, investigation of different orbital models, the evaluation of wavefunctions and computational methods for larger molecules,...

  • Exchange and vibronic interactions in a tetrahedral, five-electron mixed-valence cluster. Marks, Alison J.; Prassides, Kosmas // Journal of Chemical Physics;3/15/1993, Vol. 98 Issue 6, p4805 

    The distribution of an ‘‘excess’’ electron in a model mixed-valence tetranuclear metal cluster with open-shell ion cores is explored as a function of vibronic coupling, electron transfer, and electron exchange interactions. The system comprises five electrons, one...

  • Inverse hydrogen bonds between XeH2 and hydride and fluoride derivatives of Li, Be, Na and Mg. Blanco, Fernando; Solimannejad, Mohammad; Alkorta, Ibon; Elguero, Jose // Theoretical Chemistry Accounts: Theory, Computation, & Modeling;Oct2008, Vol. 121 Issue 3/4, p181 

    A theoretical study of the inverse hydrogen bonds complexes formed by the XeH2 molecule and hydride and fluoride derivatives of Li, Be, Na and Mg has been carried out by means of DFT (B3LYP/DGDZVP) and ab initio [MP2/DGDZVP and MP2/LJ18/6-311++G(2d,2p)] calculations. The complexes obtained...

  • Survey of diagnostic systems for the study of gyrocenter shifts on National Spherical Torus Experiment. Lee, K. C.; Domier, C. W.; Johnson, M.; Luhmann, N. C.; Park, H.; Soukhanovskii, V. A. // Review of Scientific Instruments;Oct2006, Vol. 77 Issue 10, p10F505 

    The formation of the radial electric field at the boundary of high temperature plasmas can be induced by the radial “gyrocenter shift” during the charge exchange process with neutrals. The model of the gyrocenter shift to be discussed here is different from the conventional...

  • 500-V IGBTs useful in high-voltage hard-switching apps. Kiraly, Laszlo // Electronic Design;6/27/94, Vol. 42 Issue 13, Special Analog Issue p56 

    Describes the uses of insulated gate bipolar transistors (IGBT) in high-voltage electronic applications. Switching characteristics; Advantages over other switching apparatus; Comparison of capabilities with MOFSETs.

  • Measurements and comparison of low frequency noise in npn and pnp polysilicon emitter bipolar... Deen, M. Jamal; Rumyantsev, S.; Bashir, R.; Taylor, R. // Journal of Applied Physics;7/1/1998, Vol. 84 Issue 1, p625 

    Provides information on a study investigating low frequency noise characteristics of high voltage, high performance complementary polysilicon emitter bipolar transistors. Methodology used to conduct the study; Information on the dependence of low frequency noise on the base biasing resistance;...

  • Gummel-Poon model for Npn heterojunction bipolar phototransistors. Frimel, S.M.; Roenkel, K.P. // Journal of Applied Physics;10/1/1997, Vol. 82 Issue 7, p3581 

    Describes a Gummel-Poon model for single heterojunction Npn bipolar phototransistors. Effects of dc base biases on the current and optical gains; Determination of the excess electron concentration at the emitter end of the quasineutral base; Matching of the thermionic field emission across the...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics