Nonequilibrium electron transport in bipolar devices

Levi, A. F. J.; Yafet, Y.
July 1987
Applied Physics Letters;7/6/1987, Vol. 51 Issue 1, p42
Academic Journal
The dynamics of nonequilibrium electron transport in bipolar devices have been investigated by calculating minority-carrier elastic and inelastic scattering rates as a function of energy for different majority-carrier concentrations in typical p-type III-V semiconductors. Scattering rates depend on the majority-carrier concentration and a constraint involving the ratio of electron and heavy-hole effective mass.


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