TITLE

Long-range order in InxGa1-xAs

AUTHOR(S)
Kuan, T. S.; Wang, W. I.; Wilkie, E. L.
PUB. DATE
July 1987
SOURCE
Applied Physics Letters;7/6/1987, Vol. 51 Issue 1, p51
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have found by electron diffraction that In0.5Ga0.5As thin crystals, grown on InP substrates by molecular beam epitaxy along the <110> direction, exhibit a long-range order identical to those observed previously in the AlxGa1-xAs alloy system. In the ordered In0.5Ga0.5As structure, the 0, 0, 0 and 1/2, 1/2, 0 sites in each unit cell are preferentially occupied by Ga atoms, and the 1/2, 0, 1/2 and 0, 1/2, 1/2 sites are occupied by In atoms. Our diffraction results also indicate the presence of a high density of antiphase boundaries in the ordered In0.5Ga0.5As phase.
ACCESSION #
9823454

 

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