TITLE

Characterization of interface defects in GaAs-GaAlAs superlattices

AUTHOR(S)
Mauger, A.; Feng, S. L.; Bourgoin, J. C.
PUB. DATE
July 1987
SOURCE
Applied Physics Letters;7/6/1987, Vol. 51 Issue 1, p27
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Capacitance transients in a 20-20 Å GaAs-Ga0.7 Al0.3As n-type (3×1016 cm-3) Si-doped superlattice have been performed. In the temperature range 50–100 K, a logarithmic time decay is observed. We attribute this time decay to the existence of a continuum of deep levels in the fundamental gap of the superlattice, related to electron traps located at the GaAs-GaAlAs interfaces.
ACCESSION #
9823428

 

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