Characterization of interface defects in GaAs-GaAlAs superlattices

Mauger, A.; Feng, S. L.; Bourgoin, J. C.
July 1987
Applied Physics Letters;7/6/1987, Vol. 51 Issue 1, p27
Academic Journal
Capacitance transients in a 20-20 Å GaAs-Ga0.7 Al0.3As n-type (3×1016 cm-3) Si-doped superlattice have been performed. In the temperature range 50–100 K, a logarithmic time decay is observed. We attribute this time decay to the existence of a continuum of deep levels in the fundamental gap of the superlattice, related to electron traps located at the GaAs-GaAlAs interfaces.


Related Articles

  • Defect structures at the GaAs/Si interface after annealing. Tsai, H. L.; Lee, J. W. // Applied Physics Letters;7/13/1987, Vol. 51 Issue 2, p130 

    High-resolution electron microscopy was applied to investigate the effect of post-annealing on the defect structure at the GaAs/Si interface. This study indicates that annealing results in dislocation rearrangement at the interface to form the majority of Lomer’s dislocations with their...

  • Microstructural characterization of patterned gallium arsenide grown on <001> silicon substrates. Matyi, R. J.; Shichijo, H.; Moore, T. M.; Tsai, H-L. // Applied Physics Letters;7/6/1987, Vol. 51 Issue 1, p18 

    The microstructure of patterned GaAs grown on Si substrates by molecular beam epitaxy has been examined with both transmission and scanning electron microscopies. The GaAs was found to be single crystal with excellent morphology to the limit of the plasma oxide defining mask. In samples where...

  • Capacitance transient analysis of configurationally bistable defects in semiconductors. Levinson, M. // Journal of Applied Physics;10/1/1985, Vol. 58 Issue 7, p2628 

    Presents a study that examined the configurationally bistable defects in semiconductors using deep level capacitance transient spectroscopy. Background on deep level capacitance transient spectroscopy analysis; Analysis of the center-related defect in silicon semiconductors; Evaluation of the...

  • Carbon doping and lattice contraction of GaAs films grown by conventional molecular beam epitaxy. Hoke, W. E.; Lemonias, P. J.; Weir, D. G.; Hendriks, H. T.; Jackson, G. S. // Journal of Applied Physics;1/1/1991, Vol. 69 Issue 1, p511 

    Presents information on a study which investigated carbon-doped gallium arsenide films grown by solid-source molecular beam epitaxy using a graphite filament. Examination of the effect of arsenic species on carbon doping; Measurement of the Hall mobilities of carbon- and beryllium-doped films;...

  • Optical activity of Yb in GaAs and low-dimensional GaAs/GaAlAs structures. Gippius, A. A.; Konnov, V. M.; Dravin, V. A.; Loıko, N. N.; Kazakov, I. P.; Ushakov, V. V. // Semiconductors;Jun99, Vol. 33 Issue 6, p627 

    It is shown that the optical activation of Yb in GaAs and low-dimensional GaAs/GaAlAs structures can be achieved by forming three-component (Yb+S/Se/Te+O) luminescence centers based on the Yb[sup 3+] ion. A correlation between the characteristics of these centers and the parameters of the...

  • Experimental measurement of bulk and edge generation in Al[sub 0.4]Ga[sub 0.6]As PiN structures. Neudeck, P.G.; Cooper Jr., J.A.; Melloch, M.R. // Applied Physics Letters;3/18/1991, Vol. 58 Issue 11, p1175 

    Investigates experimentally the behavior of reverse-biased PiN junction leakage at low voltages in Al[sub 0.4] Ga[sub 0.6] As semiconductors. Importance of bulk generation at the etched device periphery; Temperature dependence of both leakage mechanisms; Occurrence of majority of bulk...

  • Evidence for band-gap narrowing effects in Be-doped, p-p+ GaAs homojunction barriers. Chuang, H. L.; DeMoulin, P. D.; Klausmeier-Brown, M. E.; Melloch, M. R.; Lundstrom, M. S. // Journal of Applied Physics;12/1/1988, Vol. 64 Issue 11, p6361 

    Presents a study that examined the electrical performance of beryllium-doped gallium arsenide semiconductor homojunction barriers. Methodology; Analysis of the current-voltage characteristics of the sample; Correlation between surface recombination velocity and etch depth.

  • Novel amorphous silicon doping superlattice device with bidirectional S-shaped negative.... Liu, C.R.; Fang, Y.K. // Applied Physics Letters;7/12/1993, Vol. 63 Issue 2, p177 

    Investigates the fabrication of amorphous silicon doping superlattice device with bidirectional S-shaped negative differential characteristics. Reason for the occurrence of S-shaped switching phenomenon; Application of electronic transportation theory; Illustration of band diagram at thermal...

  • Ion-implanted Zn diffusion and impurity-induced disordering of an AlGaAs superlattice. Zucker, E. P.; Hashimoto, A.; Fukunaga, T.; Watanabe, N. // Applied Physics Letters;2/6/1989, Vol. 54 Issue 6, p564 

    The diffusion coefficient of ion-implanted Zn and the Al-Ga interdiffusion coefficient in an Al0.5Ga0.5As/GaAs superlattice (SL) are extracted from secondary-ion mass spectroscopy profiles for four diffusion times at 750 °C. The zinc diffusion coefficient goes as the square of the zinc...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics