In situ study of the molecular beam epitaxy of CoSi2 on (111) Si by transmission electron microscopy and diffraction

Gibson, J. M.; Batstone, J. L.; Tung, R. T.
July 1987
Applied Physics Letters;7/6/1987, Vol. 51 Issue 1, p45
Academic Journal
The growth of CoSi2 has been studied by deposition and reaction of Co on clean Si (111) surfaces in situ in a modified ultrahigh vacuum transmission electron microscope. On deposition of nominally 20 Å Co at room temperature, strong interaction between Si and Co occurs yielding an epitaxial film which is believed to be a hexagonally distorted form of the Co2Si structure. On heating to ∼350 °C the growth of epitaxial CoSi is observed, which transforms to CoSi2 at ∼450 °C. Silicon-rich phases propagate by lateral motion of phase boundaries. Substantial pinhole density arises in films only after annealing at higher temperatures. The B orientation dominates under similar annealing conditions. In contrast to NiSi2, the growth of cobalt silicide films on Si is dominated by bulk phase formation, with interfacial energy minimized in all cases by epitaxy.


Related Articles

  • Observation of dislocation-mediated layer-by-layer interface growth. Tong, X.; Gibson, J.M. // Applied Physics Letters;7/11/1994, Vol. 65 Issue 2, p168 

    Examines the growth of palladium silicide (Pd[sub 2]Si) thin films on silicon surfaces using in situ transmission electron microscope under ultrahigh vacuum conditions. Reaction of deposited Pd to Si at room temperature; Growth of films into strained islands at elevated temperatures; Cause of...

  • Design of an ultrahigh-vacuum specimen environment for high-resolution transmission electron microscopy. McDonald, M. L.; Gibson, J. M.; Unterwald, F. C. // Review of Scientific Instruments;Apr89, Vol. 60 Issue 4, p700 

    A JEOL 200CX high-resolution transmission electron microscope with point-to-point resolution of 2.5 Å has been modified to achieve an ultrahigh-vacuum specimen environment (∼ 10[sup -9]τ). In situ heating and evaporation are provided in the specimen viewing position, where high...

  • Thermal shock cleavage of silicon (111) thin crystals. Savage, T. S.; Xu, P.; Marks, L. D. // Journal of Applied Physics;2/1/1993, Vol. 73 Issue 3, p1039 

    Presents the results of pulsed laser damage of clean, thin samples of silicon (111) studied in an ultrahigh vacuum transmission electron microscope. Background to the study; Experimental method; Results.

  • Formation of GdSi2 under UHV evaporation and in situ annealing. Suu, H. V.; Petõ, G.; Mezey, G.; Pászti, F.; Kótai, E.; Fried, M.; Manuaba, A.; Zsoldos, E.; Gyulai, J. // Applied Physics Letters;2/10/1986, Vol. 48 Issue 6, p437 

    GdSi2 was prepared under ultrahigh vacuum conditions. Prior to processing, a clean interface was produced using diluted HF dipping. It is pointed out that the ‘‘critical temperature’’ for formation published earlier is probably an artifact and correlation between the...

  • In situ transmission electron microscopy ion irradiation studies at Orsay. Ruault, M.-O.; Fortuna, F.; Bernas, H.; Chaumont, J.; Kaïtasov, O.; Borodin, V. A. // Journal of Materials Research;Jul2005, Vol. 20 Issue 7, p1758 

    Crucial features of materials evolution due to ion beam irradiation are often revealed only through studies of process dynamics. We review some significant examples of such experiments performed over the last 25 years with the Orsay in situ facility: a transmission electron microscope setup...

  • Development of a surface conductivity measurement system for ultrahigh vacuum transmission electron microscope. Minoda, H.; Hatano, K.; Yazawa, H. // Review of Scientific Instruments;Nov2009, Vol. 80 Issue 11, p113702 

    The surface conductivity measurement system using a micro-four-point probe (M4PP) had been developed for the ultrahigh vacuum transmission electron microscope (UHV-TEM). Since the current distribution in the sample crystals during the current voltage measurement by the M4PP is localized within...

  • Formation of iron silicide nano-islands on Si substrates by metal organic chemical vapor deposition under electron beams. Tanaka, M.; Chu, F.; Shimojo, M.; Takeguchi, M.; Mitsuishi, K.; Furuya, K. // Journal of Materials Science;May2006, Vol. 41 Issue 9, p2667 

    Electron-beam induced chemical vapor deposition (EBI-CVD) of Fe(CO)5 was performed on both Si (111) and (110) substrates at 673–873 K inside an ultrahigh vacuum transmission electron microscope. The formation of iron silicide islands was observed on both substrates. Cubic silicide...

  • Up and Down Atomic Steps. FEDINA, L. I.; LATYSHEV, A. V. // SCIENCE First Hand;2015, Vol. 40 Issue 1, p82 

    The article focuses on the surfaces of crystalline silicon taken from reflection electron microscope (REM). Topics discussed include steps in the image caused by crystallographic planes that have increased atomic density, creation of ultrahigh vacuum (UHV) around surface to observe atomic steps...

  • In situ transmission electron microscopy studies of silicide-mediated crystallization of.... Hayzelden, C.; Batstone, J.L. // Applied Physics Letters;1/13/1992, Vol. 60 Issue 2, p225 

    Observes the silicide-mediated phase transformation of amorphous to crystalline silicon (Si) using the transmission electron microscope. Occurrence of crystallization of the nickel-implanted amorphous silicon; Migration of nickel disilicide precipitates through an amorphous Si film; Growth...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics