Free-carrier effects on luminescence linewidths in quantum wells

Skolnick, M. S.; Nash, K. J.; Saker, M. K.; Bass, S. J.; Claxton, P. A.; Roberts, J. S.
June 1987
Applied Physics Letters;6/29/1987, Vol. 50 Issue 26, p1885
Academic Journal
The effects of free-carrier broadening on luminescence linewidths in InGaAs-InP quantum wells (QW’s) are demonstrated using Schottky barrier depletion and magnetic field quantization of the conduction-band-energy levels. After removal of free-carrier broadening, linewidths of 5 meV for 100-Å, and 3.5 meV for 150-Å QW’s grown by metalorganic chemical vapor deposition are obtained. Widths of 3.4 meV for a 110-Å QW grown by molecular beam epitaxy (MBE) on an n+ substrate, and only 2.0 meV at 6.2 T for a similar MBE sample grown on a semi-insulating substrate are also reported.


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