Antiphase-domain-free growth of cubic SiC on Si(100)

Shibahara, K.; Nishino, S.; Matsunami, H.
June 1987
Applied Physics Letters;6/29/1987, Vol. 50 Issue 26, p1888
Academic Journal
Single crystals of cubic SiC that are free of antiphase domains were successfully grown by chemical vapor deposition on Si substrates inclined at 2° from (100) towards (011). The relationship between the generation of antiphase domains and the inclination of a surface was investigated by using spherically polished Si substrates. Inclination, except towards (011), resulted in the generation of antiphase domains. Elimination of antiphase domains was confirmed by molten KOH etching of the grown layer.


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