Chemically enhanced focused ion beam etching of deep grooves and laser-mirror facets in GaAs under Cl2 gas irradiation using a fine nozzle

Takado, N.; Asakawa, K.; Yuasa, T.; Sugata, S.; Miyauchi, E.; Hashimoto, H.; Ishii, M.
June 1987
Applied Physics Letters;6/29/1987, Vol. 50 Issue 26, p1891
Academic Journal
Chlorine-enhanced GaAs maskless etching has been performed with a novel focused ion beam etching (FIBE) system. The system is composed of an air-locked ultrahigh vacuum chamber, a 30-keV Ga+ FIB column, and a fine nozzle. The nozzle irradiates a high-density Cl2 flux on a desired, small area of the sample while retaining a sufficiently low surrounding gas pressure for stable Ga+ FIB emission. Condensed Ga residues, appearing on the etched surface with no Cl2 gas, could be suppressed under Cl2 gas irradiation. Highly chemically enhanced sputtering yields (up to 50 GaAs molecules per incident ion) were obtained by selecting the optimum relationship between scanning time and Cl2 gas pressure. At the maximum yield, a deep groove (about 6 μm) with a smooth surface was obtained by line-scanning FIBE. The etching was applied to laser-mirror formation of an AlGaAs laser. A vertical mirror facet, fabricated in advance by a reactive ion beam etching, was trimmed about one micron thick by line-scanning FIBE. Light output versus current characteristics did not change before and after FIBE and the etching has been shown to be useful for laser-mirror formation.


Related Articles

  • Investigation of the kinetic mechanism of the Ar+-ion-enhanced Cl2/GaAs{110} etch rate phenomenon: Dependence on the reactant flux ratio. DeLouise, L. A. // Journal of Applied Physics;8/15/1992, Vol. 72 Issue 4, p1608 

    Presents a study that investigated the effect of argon ion bombardment on the reaction of chlorine supersonic beam with gallium arsenide. Methodology; Analysis of the dynamical origin of the etch rate enhancement effect; Examination of the dependence of the etch rate on the chlorine/argon ion...

  • A Quantum Leap to Smaller Chips. Davies, John // New Scientist;1/12/91, Vol. 129 Issue 1751, p48 

    Reports that semiconducting materials such as gallium arsenide are allowing physicists to create devices tailored to work at the quantum level. Advantages of semiconducting devices other than silicon; Gallium arsenide in optoelectronics; Smaller and faster computers; Integrated circuits. ...

  • Four-channel AlGaAs/GaAs optoelectronic integrated transmitter array. Kuno, M.; Sanada, T.; Nobuhara, H.; Makiuchi, M.; Fujii, T.; Wada, O.; Sakurai, T. // Applied Physics Letters;12/8/1986, Vol. 49 Issue 23, p1575 

    A monolithic four-channel optical transmitter at 0.8 μm wavelength has been fabricated. This has been achieved by using AlGaAs/GaAs optoelectronic integrated circuit (OEIC) approach. The OEIC chip contains four transmitter channels and each channel is composed of a graded-index waveguide...

  • Nanometer-scale columns in GaAs fabricated by angled chlorine ion-beam-assisted etching. Goodhue, W. D.; Pang, S. W.; Johnson, G. D.; Astolfi, D. K.; Ehrlich, D. J. // Applied Physics Letters;11/23/1987, Vol. 51 Issue 21, p1726 

    Angled chlorine ion-beam-assisted etching has been used in combination with masked ion beam lithography to produce columns in GaAs with widths of less than 10 nm and height-to-width ratios greater than 25. This technique allows the highly controllable fabrication of structures with dimensions...

  • Determination of optical damage cross-sections and volumes surrounding ion bombardment tracks in GaAs using coherent acoustic phonon spectroscopy. Steigerwald, A.; Hmelo, A. B.; Varga, K.; Feldman, L. C.; Tolk, N. // Journal of Applied Physics;Jul2012, Vol. 112 Issue 1, p013514 

    We report the results of coherent acoustic phonon spectroscopy analysis of band-edge optical modification of GaAs irradiated with 400 keV Ne++ for doses between 1011-1013 cm-2. We relate this optical modification to the structural damage density as predicted by simulation and verified by ion...

  • One-dimensional GaAs wires fabricated by focused ion beam implantation. Hiramoto, Toshiro; Hirakawa, Kazuhiko; Iye, Yasuhiro; Ikoma, Toshiaki // Applied Physics Letters;11/16/1987, Vol. 51 Issue 20, p1620 

    We have developed a novel, simple technique for fabrication of one-dimensional GaAs wires by utilizing only a focused ion beam (FIB) technology. The FIB implantation forms high-resistive regions which confine an n+ channel into a very narrow conductive wire. The minimum width of the GaAs wire...

  • Electrically active defect centers induced by Ga[sup +] focused ion beam irradiation of GaAs(100). Brown, S.J.; Rose, P.D.; Jones, G.A.C.; Linfield, E.H.; Ritchie, D.A. // Applied Physics Letters;1/25/1999, Vol. 74 Issue 4, p576 

    Examines electrically active defect centers induced by gallium (Ga[sup+]) focused ion beam irradiation of gallium arsenic (GaAs). Identification of defect centers identified as electron traps lying below the surface state conduction band; Absence of significant surface damage indicative of...

  • Reduction of induced damage in GaAs processed by Ga+ focused-ion-beam-assisted Cl2 etching. Sugimoto, Y.; Taneya, M.; Hidaka, H.; Akita, K. // Journal of Applied Physics;9/1/1990, Vol. 68 Issue 5, p2392 

    Studies the damage in gallium (Ga) arsenide induced by Ga[sub+] focused-ion-beam-assisted chlorine etching. Description of the apparatus used in the study; Details on the experiment; Results of the study.

  • Oxidation lift-off method for layer transfer of GaAs/AlAs-based structures. Oktyabrsky, S.; Katsnelson, A.; Tokranov, V.; Todt, R.; Yakimov, M. // Applied Physics Letters;7/5/2004, Vol. 85 Issue 1, p151 

    A method for layer transfer via attachment and release of GaAs-based components onto silicon platform in a single-step process (oxidation lift-off method) is proposed. The method involves moderate temperature (∼400°C) alloy bonding of GaAs devices with simultaneous removal of the GaAs...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics