Capacitance spectroscopy of Si-TaSi2 eutectic composite structures

Levinson, M.; Ditchek, B. M.; Yacobi, B. G.
June 1987
Applied Physics Letters;6/29/1987, Vol. 50 Issue 26, p1906
Academic Journal
The Si matrix phase of directionally solidified Si-TaSi2 composite structures has been characterized by deep level capacitance transient spectroscopy, using the grown-in metal-semiconductor junctions. The Si is found to be of high quality. No electrically active Ta was detected with a minimum experimental sensitivity of ∼6×1011 cm-3. Some samples exhibited one of two defect states having electron emission activation energies of 0.36 and 0.65 eV. These states appear to be associated with dislocations.


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