Microstructural studies of reactive ion etched silicon

Jeng, S. J.; Oehrlein, G. S.
June 1987
Applied Physics Letters;6/29/1987, Vol. 50 Issue 26, p1912
Academic Journal
The structures of Si near-surface damage induced after the removal of a thick SiO2 layer on Si using reactive ion etching with various etching gases were studied by transmission electron microscopy. Cross-sectional micrographs showed the presence of a fluorocarbon film on the Si surface after the SiO2 layer is etched away. No extended defects were observed in Si etched utilizing pure CF4 or CF4/20% H2 etching gas, even after a 25-min overetch into Si. For a CF4/40% H2 etching gas, no extended lattice defects were evident for overetch times of up to 5 min. However, extensive damage was found in the Si surface layer after a 10-min or longer overetch. This extensive damage consists of {111} planar defects distributing underneath the Si surface to a depth of 300 Ã…. The planar defects are highly decorated by impurities, likely H and possibly C, F. A pure H2 etching gas was found to introduce a heavily damaged layer and a high density of extended defects near the Si surface after only a 5-min overetch. These observations indicate that H ion bombardment plays an important role in the formation of Si near-surface damage during reactive ion etching.


Related Articles

  • Characterization of microstructural defects in BF+2 -implanted silicon. Wu, I. W.; Chen, L. J. // Journal of Applied Physics;10/15/1985, Vol. 58 Issue 8, p3032 

    Focuses on the characterization of microstructural defects in BF[sub2+] -implanted silicon. Determination of the nature, size, distribution and density of the defects; Formation mechanisms of the microstructural defects; Reasons for the difference in microstructures between B[sub+] implants and...

  • Fabrication of visibly photoluminescent Si microstructures by focused ion beam implantation and.... Xu, J.; Steckl, A.J. // Applied Physics Letters;10/17/1994, Vol. 65 Issue 16, p2081 

    Examines the fabrication of optically active silicon (Si) microstructures embedded in a crystalline Si substrate. Realization of photonic integrated circuits; Combination of Si microstructure fabrication by localized high dose gallium focused ion beam implantation; Attainment of self-selective...

  • Epitaxial growth of Cu (001) on Si (001): Mechanisms of orientation development and defect.... Hashim, I.; Park, B. // Applied Physics Letters;11/15/1993, Vol. 63 Issue 20, p2833 

    Describes the evolution of microstructure during ultrahigh vacuum ion beam sputter deposition of copper (001) at room temperature on hydrogen-terminated silicon (001). Confirmation of firm thickness during growth; Possibility of a kinetic barrier for silicide nucleation; Reduction of mosaic...

  • On the microstructure of Si coimplanted with H+ and He+ ions at moderate energies. Reboh, S.; Schaurich, F.; Declemy, A.; Barbot, J. F.; Beaufort, M. F.; Cherkashin, N.; Fichtner, P. F. P. // Journal of Applied Physics;Aug2010, Vol. 108 Issue 2, p023502 

    We report on the microstructure of silicon coimplanted with hydrogen and helium ions at moderate energies. X-ray diffraction investigations in as-implanted samples show the direct correlation between the lattice strain and implanted ion depth profiles. The measured strain is examined in the...

  • Phosphorus doping of silicon by proton induced nuclear reactions. Abril, Isabel; Garcia-Molina, Rafael // Applied Physics Letters;5/29/1995, Vol. 66 Issue 22, p3036 

    Proposes a method to obtain phosphorus doped silicon using proton induced nuclear resonant reactions. Production of novel microstructures in direct phosphorus ion beam implantation; Bombardment of proton beam on a natural silicon producing a silicon matrix; Reduction of target damage caused by...

  • Phase formation due to high dose aluminum implantation into silicon carbide. Heera, V.; Reuther, H. // Journal of Applied Physics;1/1/2000, Vol. 87 Issue 1, p78 

    Presents information on a study which discussed the phase formation due to high dose of aluminum implantation into silicon carbide. Microstructure; Chemical reactions and compositional changes; Conclusions.

  • Dislocations induced by bubble formation in high energy He implantation in silicon. Oliviero, E.; Beaufort, M. F.; Barbot, J. F. // Journal of Applied Physics;5/15/2001, Vol. 89 Issue 10, p5332 

    He[sup +] ions were implanted into a (111) epitaxial n-type silicon wafer at 1.6 MeV and at a dose of 2x10[sup 16] cm[sup -2]. After implantation the samples were subjected to thermal annealing at 800 °C for 30 min. Cross section transmission electron microscopy (TEM) was used to characterize...

  • Morphological stability during solidification of silicon incorporating metallic impurities. Warrender, Jeffrey M.; Mathews, Jay; Recht, Daniel; Smith, Matthew; Gradečak, Silvija; Aziz, Michael J. // Journal of Applied Physics;2014, Vol. 115 Issue 16, p163516-1 

    We study the stability of a planar solidification front during pulsed laser melting-induced rapid solidification of silicon containing high concentrations of ion-implanted metallic impurities. We calculate the critical impurity concentration for destabilizing plane-front solidification, and...

  • Formation of surface structures on single-crystalline silicon under the action of nanosecond high-power ion beam pulses. Kovivchak, V.; Panova, T.; Krivozubov, O.; Davletkil'deev, N. // Technical Physics Letters;Dec2011, Vol. 37 Issue 12, p1183 

    We have studied the formation of surface structures on single-crystalline silicon surface under the action of a nanosecond pulsed high-power proton-carbon ion beam. Morphological features of the structures that appear as a result of this processing are described and possible mechanisms of their...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics