Characterization of reactively sputtered ruthenium dioxide for very large scale integrated metallization

Krusin-Elbaum, L.; Wittmer, M.; Yee, D. S.
June 1987
Applied Physics Letters;6/29/1987, Vol. 50 Issue 26, p1879
Academic Journal
We have investigated reactively sputtered films of RuO2 for possible application in very large scale integrated circuits. Sputtering yields stoichiometric ruthenium dioxide in a large window of oxygen pressures and the films are reasonably low stressed in the 10-9 dyn cm-2 range. The resistivity of as deposited films is 40 μΩ cm. The films are excellent barriers against interdiffusion of Si and Al.


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